TI DS26LV31TMX/NOPB

DS26LV31T
www.ti.com
SNLS114C – MARCH 1999 – REVISED FEBRUARY 2013
DS26LV31T 3V Enhanced CMOS Quad Differential Line Driver
Check for Samples: DS26LV31T
FEATURES
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Industrial Product Meets TIA/EIA-422-B (RS422) and ITU-T V.11 Recommendation
Military Product Conforms to TIA/EIA-422-B
(RS-422)
Interoperable with Existing 5V RS-422
Networks
Industrial and Military temperature Range
Guaranteed VOD of 2V min Over Operating
Conditions
Balanced Output Crossover for Low EMI
(Typical Within 40 mV of 50% Voltage Level)
Low Power Design (330 μW @ 3.3V static)
ESD ≥ 7 kV on Cable I/O Pins (HBM)
Guaranteed AC Parameter:
– Maximum Driver Skew: 2 ns
– Maximum Transition Time: 10 ns
Pin Compatible with DS26C31
Available in SOIC and CLGA Packaging
Standard Microcircuit Drawing (SMD) 596298584
DESCRIPTION
The DS26LV31T is a high-speed quad differential
CMOS driver that meets the requirements of both
TIA/EIA-422-B and ITU-T V.11. The CMOS
DS26LV31T features low static ICC of 100 μA MAX
which makes it ideal for battery powered and power
conscious applications.
Differential outputs have the same VOD guarantee
(≥2V) as the 5V version.
The EN and EN* inputs allow active Low or active
High control of the TRI-STATE outputs. The enables
are common to all four drivers. Protection diodes
protect all the driver inputs against electrostatic
discharge. Outputs have enhanced ESD protection
providing greater than 7 kV tolerance. The driver and
enable inputs (DI, EN, EN*) are compatible with low
voltage LVTTL and LVCMOS devices.
Connection Diagram
Figure 1. Dual-In-Line Package
Top View
See Package D (R-PDSO-G16)
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1999–2013, Texas Instruments Incorporated
DS26LV31T
SNLS114C – MARCH 1999 – REVISED FEBRUARY 2013
www.ti.com
Truth Table (1)
Enables
Input
EN*
DI
DO+
L
H
X
Z
Z
L
L
H
H
H
L
All other
combinations of
enable inputs
(1)
Outputs
EN
DO−
L = Low logic state
X = Irrelevant
H = High logic state
Z = TRI-STATE
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings (1) (2)
−0.5V to +7V
Supply Voltage (VCC)
Enable Input Voltage (EN, EN*)
−0.5V to VCC + 0.5V
Driver Input Voltage (DI)
−0.5V to VCC + 0.5V
Clamp Diode Current
±20 mA
DC Output Current, per pin
±150 mA
Driver Output Voltage
−0.5V to +7V
(Power Off: DO+, DO−)
Maximum Package Power Dissipation @+25°C
D0016A Package
1226 mW
NAD0016A Package
1119 mW
Derate D0016A Package 9.8 mW/°C above +25°C
Derate NAD0016A Package 7.5 mW/°C above +25°C
−65°C to +150°C
Storage Temperature Range
Lead Temperature Range Soldering (4 sec.)
+260°C
ESD Ratings (HBM, 1.5 kΩ, 100 pF)
≥7 kV
Driver Outputs
≥2.5 kV
Other Pins
(1)
(2)
“Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to
imply that the devices should be operated at these limits. The Electrical Characteristics specifies conditions of device operation.
If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
Recommended Operating Conditions
Min
Typ
Max
Units
3.0
3.3
3.6
V
DS26LV31T
−40
+25
+85
°C
DS26LV31W
−55
+25
+125
°C
500
ns
Supply Voltage (VCC)
Operating Free Air Temperature Range (TA)
Input Rise and Fall Time
2
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DS26LV31T
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SNLS114C – MARCH 1999 – REVISED FEBRUARY 2013
Electrical Characteristics (1)
(2)
Over supply voltage and operating temperature ranges, unless otherwise specified
Parameter
Test Conditions
VOD1
Output Differential Voltage
RL = ∞ (No Load)
VOD2
Output Differential Voltage
RL = 100Ω (Figure 2)
ΔVOD2
Change in Magnitude of
Output Differential Voltage
IO ≥ 20 mA
VOD3
Output Differential Voltage
VOC
Common Mode Voltage
ΔVOC
Change in Magnitude of
Common Mode Voltage
IOZ
TRI-STATE Leakage
Current
VOUT = VCC or GND
Drivers Disabled
ISC
Output Short Circuit Current
VOUT = 0V
VIN = VCC or
GND (4)
IOFF
Output Leakage Current
Pin
DO+,
DO−
Min
Typ
Max
Units
3.3
4
V
2
2.6
−400
7
400
mV
RL = 3900Ω (V.11)
Figure 2 and (3)
3.2
3.6
V
RL = 100Ω (Figure 2)
1.5
2
V
6
400
mV
±0.5
±20
μA
−70
−150
mA
-160
mA
−400
TA = -40°C to +85°C
−40
TA = -55°C to
+125°C (5)
-30
V
VCC = 0V, VOUT = 3V or 6V
0.03
100
μA
VCC = 0V, VOUT =
−0.25V
−0.08
−100
μA
-200
μA
V
TA = -40°C to +85°C
TA = -55°C to
+125°C
VIH
High Level Input Voltage
DI,
2.0
VCC
VIL
Low Level Input Voltage
EN,
GND
0.8
V
IIH
High Level Input Current
VIN = VCC
10
μA
IIL
Low Level Input Current
VIN = GND
VCL
Input Clamp Voltage
IIN = −18 mA
ICC
Power Supply Current
No Load, VIN (all) = VCC
or GND
(1)
(2)
(3)
(4)
(5)
EN*
−10
TA = -40°C to +85°C
μA
VCC
TA = -55°C to
+125°C
−1.5
V
100
μA
125
μA
Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground
except differential voltages VOD1, VOD2, VOD3.
All typicals are given for VCC = +3.3V, TA = +25°C.
This specification limit is for compliance with TIA/EIA-422-B and ITU-T V.11.
Only one output shorted at a time. The output (true or complement) is configured High.
This parameter does not meet the TIA/EIA-422-B specification.
Switching Characteristics - Industrial
(1) (2)
Over supply voltage and -40°C to +85°C operating temperature range, unless otherwise specified
Parameter
tPHLD
Differential Propagation Delay High to Low
Test Conditions
RL = 100Ω, CL = 50 pF
(Figure 3 and Figure 4)
Min
Typ
Max
Units
6
10.5
16
ns
6
tPLHD
Differential Propagation Delay Low to High
11
16
ns
tSKD
Differential Skew (same
channel) |tPHLD − tPLHD|
0.5
2.0
ns
tSK1
Skew, Pin to Pin (same device)
1.0
2.0
ns
tSK2
Skew, Part to Part
3.0
5.0
ns
tTLH
Differential Transition Time
Low to High (20% to 80%)
4.2
10
ns
tTHL
Differential Transition Time
High to Low (80% to 20%)
4.7
10
ns
tPHZ
Disable Time High to Z
12
20
ns
tPLZ
Disable Time Low to Z
9
20
ns
(1)
(2)
(3)
(3)
(Figure 5 Figure 6)
f = 1 MHz, tr and tf ≤ 6 ns, 10% to 90%.
See TIA/EIA-422-B specifications for exact test conditions.
Devices are at the same VCC and within 5°C within the operating temperature range
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DS26LV31T
SNLS114C – MARCH 1999 – REVISED FEBRUARY 2013
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Switching Characteristics - Industrial (1) (2) (continued)
Over supply voltage and -40°C to +85°C operating temperature range, unless otherwise specified
Parameter
Test Conditions
Min
Typ
Max
Units
tPZH
Enable Time Z to High
22
32
ns
tPZL
Enable Time Z to Low
22
32
ns
fmax
Maximum Operating
Frequency (4)
(4)
32
MHz
All channels switching, output duty cycle criteria is 40%/60% measured at 50%. This parameter is guaranteed by design and
characterization.
Switching Characteristics - Military
(1) (2)
Over supply voltage and -55°C to +125°C operating temperature range, unless otherwise specified
Parameter
tPHLD
Differential Propagation Delay High to Low
Test Conditions
RL = 100Ω, CL = 50 pF
(Figure 3 Figure 4)
Min
Max
Units
5
25
ns
5
25
ns
tPLHD
Differential Propagation Delay Low to High
tSKD
Differential Skew (same
channel) |tPHLD − tPLHD|
5.0
ns
tSK1
Skew, Pin to Pin (same device)
5.0
ns
tPHZ
Disable Time High to Z
35
ns
tPLZ
Disable Time Low to Z
35
ns
tPZH
Enable Time Z to High
40
ns
tPZL
Enable Time Z to Low
40
ns
(1)
(2)
4
(Figure 5 Figure 6)
f = 1 MHz, tr and tf ≤ 6 ns, 10% to 90%.
See TIA/EIA-422-B specifications for exact test conditions.
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Copyright © 1999–2013, Texas Instruments Incorporated
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DS26LV31T
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SNLS114C – MARCH 1999 – REVISED FEBRUARY 2013
PARAMETER MEASUREMENT INFORMATION
Figure 2. Differential Driver DC Test Circuit
Figure 3. Differential Driver Propagation Delay and Transition Time Test Circuit
A.
Generator waveform for all tests unless otherwise specified: f = 1 MHz, Duty Cycle = 50% Zo = 50Ω, tr ≤ 10 ns, tf ≤
10.
B.
CL includes probe and fixture capacitance.
Figure 4. Differential Driver Propagation Delay and Transition Time Waveforms
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DS26LV31T
SNLS114C – MARCH 1999 – REVISED FEBRUARY 2013
www.ti.com
If EN is the input, then EN* = High
If EN* is the input, then EN = Low
Figure 5. Driver Single-Ended TRI-STATE Test Circuit
Figure 6. Driver Single-Ended TRI-STATE Waveforms
6
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Copyright © 1999–2013, Texas Instruments Incorporated
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DS26LV31T
www.ti.com
SNLS114C – MARCH 1999 – REVISED FEBRUARY 2013
Typical Application Information
General application guidelines and hints for differential drivers and receivers may be found in the following
application notes:
• AN-214
• AN-457
• AN-805
• AN-847
• AN-903
• AN-912
• AN-916
Power Decoupling Recommendations:
Bypass caps must be used on power pins. High frequency ceramic (surface mount is recommended) 0.1 μF in
parallel with 0.01 μF at the power supply pin. A 10 μF or greater solid tantalum or electrolytic should be
connected at the power entry point on the printed circuit board.
RT is optional although highly recommended to reduce reflection.
Figure 7. Typical Driver Connection
Figure 8. Typical Driver Output Waveforms
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DS26LV31T
SNLS114C – MARCH 1999 – REVISED FEBRUARY 2013
www.ti.com
REVISION HISTORY
Changes from Revision B (February 2013) to Revision C
•
8
Page
Changed layout of National Data Sheet to TI format ............................................................................................................ 7
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PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
DS26LV31TM
ACTIVE
SOIC
D
16
48
TBD
Call TI
Call TI
-40 to 85
DS26LV31
TM
DS26LV31TM/NOPB
ACTIVE
SOIC
D
16
48
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
DS26LV31
TM
DS26LV31TMX
ACTIVE
SOIC
D
16
2500
TBD
Call TI
Call TI
-40 to 85
DS26LV31
TM
DS26LV31TMX/NOPB
ACTIVE
SOIC
D
16
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
DS26LV31
TM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Mar-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
DS26LV31TMX
SOIC
D
16
2500
330.0
16.4
6.5
10.3
2.3
8.0
16.0
Q1
DS26LV31TMX/NOPB
SOIC
D
16
2500
330.0
16.4
6.5
10.3
2.3
8.0
16.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Mar-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
DS26LV31TMX
SOIC
D
16
2500
367.0
367.0
35.0
DS26LV31TMX/NOPB
SOIC
D
16
2500
367.0
367.0
35.0
Pack Materials-Page 2
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