BC556 TECHNICAL SPECIFICATION PNP Planar Epitaxial Transistor TO-92 1.COLLECTOR 2.BASE 3. EMITTER DIM MIN MAX A 4.32 5.33 B 4.45 5.2 C 3.18 4.19 D 0.41 0.50 E 0.35 0.50 F 5q 5q G 1.14 1.40 H 1.14 1.53 K 12.70 - Absolute Maximun Ratings (Ta=25oC) Symbol - Ratings Unit Collector-Emmiter Voltage VCEO - 65 V Collector-Emmitor Voltage VCES - 80 V Collector Base Voltage VCBO - 80 V Emitter Base Voltage VEBO - 5 V IC - 100 mA Peak ICM - 200 mA Base Current - Peak IBM - 200 mA Emitter Current - Peak IE M - 200 mA Collector Power Dissapation Ta = 25 °C P TA - 500 mW Tj Tstg - (-55 to +150) °C Rth(j-a) - 250 °C / W Collector current Continuous Operating and Storage Junction THERMAL RESISTANCE Junction to ambient www.rectron.com Characteristics Ratings (at Ta = 25°C unless otherwise specified) Symbol Test Conditions min. Typ. max. Unit Collector Emitter Voltage VCEO IC = 2mA, IB=0 65 - - V Collector Base voltage VCBO IC = 100uA, IE=0 80 - - V Emitter Base Voltage VEBO IE = 100uA, IC =0 5 - - V Collector Cut off Current ICBO - 0.2 - 15 4 nA uA Collector Cut off Current ICES - 0.2 - 15 4 nA uA DC Current Gain hFE Collector Emitter Saturation Voltage VCE (SAT) Base Emitter Saturation Voltage VBE (SAT) Base Emitter on Voltage VBE (SAT) VCB = 30V, IE = 0 VCB = 30V, IE = 0, TJ = 150°C VCE = 80V VCE = 80V, TJ = 125°C VCE = 5V. IC = 2mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA IC = 10mA, IB = 0.5mA IC = 100mA, IB= 5mA IC = 2mA, VCE = 5V IC = 10mA, VCE = 5V 75 475 - 0.09 0.25 0.3 0.65 V - 0.7 0.9 - V 0.55 - 0.66 - 0.7 0.82 V Dynamics Characteristics Transition Frequency Collector Output Capacitance fT IC = 10mA, VCE = 5V f = 100MHz - 150 - MHz V CBO VCB = 10V, f = 1MHz - - 6 pF - 2 10 dB VCE = 5V, IC = 0.2mA Nose Figure NF RS N I .+] B = 200 Hz