RECTRON MCL4448 SEMICONDUCTOR TECHNICAL SPECIFICATION 1N4448 Micro-MELF SIGNAL DIODE Absolute Maximum Ratings (Ta = 25°C) Micro-MELF Symbol Ratings Unit VRM 100 V trr 4 ns P 500 mW Forward Current IFM 500 * mA Junction Temp. Tj (-65 to 175) °C Storage Temp. Tstg (-65 to 175) °C ITEMS Peak Reverse Voltage Reverse Recovery Time Power Dissipation 0.049(1.25) 0.047(1.20) Mechanical Data Items Package Case Lead/Finish Chip Materials Micro MELF Hermetically sealed glass Double stud/Solder Plating Glass Passivated Ratings Non-Repetive Peak Reverse Voltage 0.008(0.2) 0.079(2.0) 0.071(1.8) Symbol Units in mm VRM Ratings 100 Unit V Minimum Breakdown Voltage @IR= 100mA BV 75 V Peak Forward Surge Current @ t = 1.0s IFSM 1* A Forward Continuous Current IFM 500 * mA Maximum Forward Voltage IF= 100mA VF 1 V 25 nA 5 µA 30 µA Cj 4 pF trr 4 ns RθJA 300 K/W Maximum Reverse Current VR= 20V VR= 75V IR VR= 20V, Tj = 150 °C Maximum Junction Capacitance VR= 0, f= 1 MHz Maximum Reverse Recovery Time IF= 10mA, VR= 6V, IR= -1mA, RL = 100Ω Maximum Thermal Resistance * Note: Device terminals at ambient temperature