RU3013H N-Channel Advanced Power MOSFET MOSFET Features Pin Description • 30V/11A, RDS (ON) =16mΩ (Typ.) @ VGS=10V RDS (ON) =24mΩ (Typ.) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Available SOP-8 Applications • SMPS Absolute Maximum Ratings Symbol N-Channel MOSFET Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TA=25°C 4 A TA=25°C 40 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD RθJA ② Maximum Power Dissipation Thermal Resistance-Junction to Ambient Copyright Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2011 ① TA=25°C 11 TA=70°C 8 TA=25°C 3.1 TA=70°C 2 40 A A W °C/W www.ruichips.com RU3013H Electrical Characteristics Symbol (TA=25°C Unless Otherwise Noted) Parameter Test Condition RU3013H Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) ③ VGS=0V, IDS=250µA V 30 VDS= 30V, VGS=0V 1 TJ=85°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V 30 1.5 2 µA 2.7 V ±100 nA VGS= 10V, IDS=11A 16 18 mΩ VGS= 4.5V, IDS=10A 24 27 mΩ 1 V Drain-Source On-state Resistance Diode Characteristics VSD ③ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=1A, VGS=0V 7 ns 9 nC VGS=0V,VDS=0V,F=1MHz 1.2 Ω VGS=0V, VDS=15V, Frequency=1.0MHz 680 ISD=11A, dlSD/dt=100A/µs ④ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf pF 140 80 4 VDD=15V, RL=1.3Ω, IDS=11A, VGEN=10V, RG=6Ω Turn-off Fall Time 10 ns 16 7 ④ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 14 VDS=24V, VGS=10V, IDS=11A 2 18 nC 4 Pulse width limited by safe operating area. ②When mounted on 1 inch square copper board, t ≤10sec. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2011 2 www.ruichips.com RU3013H Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2011 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU3013H Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2011 Tj - Junction Temperature (°C) 4 www.ruichips.com RU3013H Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2011 QG - Gate Charge (nC) 5 www.ruichips.com RU3013H Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2011 6 www.ruichips.com RU3013H Ordering and Marking Information RU3013 Package (Available) H : SOP-8 Operating Temperature Range C : -55 to 150 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR : Tape & Reel Copyright Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2011 7 www.ruichips.com RU3013H Package Information SOP-8 SYMBOL MM INCH MIN MAX MIN MAX MM SYMBOL INCH MIN MAX MIN MAX A 1.350 1.750 0.053 0.069 E 3.800 4.000 0.150 0.157 A1 0.100 0.250 0.004 0.010 E1 5.800 6.200 0.228 0.244 A2 1.350 1.550 0.053 0.061 e b 0.330 0.510 0.013 0.020 L 0.400 1.270 0.016 0.050 c 0.170 0.250 0.006 0.010 θ 0° 8° 0° 8° D 4.700 5.100 0.185 0.200 1.270 (BSC) 0.050 (BSC) ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2011 8 www.ruichips.com RU3013H Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2011 9 www.ruichips.com