RU30S4H P-Channel Advanced Power MOSFET MOSFET Features Pin Description • -30V/-4.8A, RDS (ON) =50mΩ (Typ.) @ VGS=-10V RDS (ON) =80mΩ (Typ.) @ VGS=-4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Available SOP-8 Applications • Power Management. Absolute Maximum Ratings Symbol Dual P-Channel MOSFET Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TA=25°C -2.5 A TA=25°C -18 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD RθJA ② Maximum Power Dissipation Thermal Resistance-Junction to Ambient Copyright Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 ① TA=25°C -4.8 TA=70°C -3.8 TA=25°C 2 TA=70°C 1.3 A A W 62.5 °C/W www.ruichips.com RU30S4H Electrical Characteristics Symbol (TA=25°C Unless Otherwise Noted) Parameter Test Condition RU30S4H Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) ③ VGS=0V, IDS=-250µA V -30 VDS=-30V, VGS=0V -1 TJ=85°C Gate Threshold Voltage VDS=VGS, IDS=-250µA Gate Leakage Current VGS=±20V, VDS=0V -30 -1 -1.8 µA -2.5 V ±100 nA VGS=-10V, IDS=-5A 50 60 mΩ VGS=-4.5V, IDS=-3A 80 100 mΩ -1 V Drain-Source On-state Resistance Diode Characteristics VSD ③ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=-1A, VGS=0V ISD=-4A, dlSD/dt=100A/µs 15 ns 9 nC 1 Ω ④ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V, VDS=-15V, Frequency=1.0MHz 490 85 pF 40 9 VDD=-15V, RL=3.75Ω, IDS=-4A, VGEN=-10V, RG=3Ω Turn-off Fall Time 15 ns 27 11 ④ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 10 VDS=-24V, VGS=-10V, IDS=-4A 1.9 nC 3.2 Pulse width limited by safe operating area. ②When mounted on 1 inch square copper board, t ≤10sec. The value in any given application depends on the user's specific board design. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 2 www.ruichips.com RU30S4H Typical Characteristics Drain Current Ptot - Power (W) -ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area -ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance -VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU30S4H Typical Characteristics Drain-Source On Resistance -ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics -ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage -VDS - Drain-Source Voltage (V) -VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 Tj - Junction Temperature (°C) 4 www.ruichips.com RU30S4H Typical Characteristics Source-Drain Diode Forward -IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) -VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) -VGS - Gate-Source Voltage (V) Capacitance -VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 QG - Gate Charge (nC) 5 www.ruichips.com RU30S4H Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 6 www.ruichips.com RU30S4H Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU30S4H RU30S4H SOP-8 Tape&Reel 2500 13’’ 12mm Copyright Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 7 www.ruichips.com RU30S4H Package Information SOP-8 SYMBOL MM INCH MIN MAX MIN MAX MM SYMBOL INCH MIN MAX MIN MAX A 1.350 1.750 0.053 0.069 E 3.800 4.000 0.150 0.157 A1 0.100 0.250 0.004 0.010 E1 5.800 6.200 0.228 0.244 A2 1.350 1.550 0.053 0.061 e b 0.330 0.510 0.013 0.020 L 0.400 1.270 0.016 0.050 c 0.170 0.250 0.006 0.010 θ 0° 8° 0° 8° D 4.700 5.100 0.185 0.200 1.270 (BSC) 0.050 (BSC) ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 8 www.ruichips.com RU30S4H Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 9 www.ruichips.com