STM4470E SamHop Microelectronics Corp. May. 15 2007 ver1.0 N-Channel Enhancement Mode Field Effect Transistor F E AT UR E S PRODUCT SUMMARY VDSS S uper high dense cell design for low R DS (ON ). RDS(ON) ( m ı Ω ) Max ID R ugged and reliable. 12 @ VGS = 10V 40V S urface Mount P ackage. E S D P rotected. 9.5A 15 @ VGS = 4.5V SO-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 V Parameter Drain Current-Continuous a @TJ=25 C b -Pulsed ID 9.5 A IDM 39 A Drain-Source Diode Forward Current a IS 1.7 A Maximum Power Dissipation a PD 2.5 W TJ, TSTG -55 to 150 C R JA 50 C /W Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a 1 STM4470E ELECTRICAL CHARACTERISTICS (TA= 25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS =0V, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS=32V, VGS = 0V 1 uA Gate-Body Leakage IGSS VGS = 20V, VDS =0V 10 uA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250uA 1.7 3 V Drain-Source On-State Resistance RDS(ON) VGS= 10V, ID = 10A 10 12 m ohm VGS = 4.5V, ID = 6A 12 15 m ohm OFF CHARACTERISTICS 40 V ON CHARACTERISTICS b Forward Transconductance DYNAMIC CHARACTERISTICS CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Rise Time Turn-Off Delay Time 20 A 25 S 1500 PF 220 PF 150 PF 23 ns 22 ns 88 ns 27 ns VDS =15V, ID = 10A,VGS =10V 28 nC VDS =15V, ID = 10A,VGS =4.5V 12.5 nC VDS =15V, ID = 10A VGS =10V 3 nC 6 nC VDS = 10V, ID =10A c Input Capacitance Turn-On Delay Time VDS = 10V, VGS = 10V ID(ON) gFS On-State Drain Current 1 VDS =20V, VGS = 0V f =1.0MHZ c tD(ON) VDD = 15V ID = 1A VGS = 10V RGEN = 6 ohm t tD(OFF) Fall Time t Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2 STM4470E ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Min Typ C Max Unit Condition Symbol DRAIN-SOURCE DIODE CHARACTERISTICS b Diode Forward Voltage VGS = 0V, Is =1.7A VSD 0.73 1.2 Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 60 20 VG S=3.5 V 16 V G S =4V I D , Drain C urrent (A) ID , Drain C urrent(A) 50 40 VG S =10V V G S =3V 30 20 10 0 V G S =2.5V T j =125 C 12 8 -55 C 4 25 C 0 0 0.5 1 1.5 2 2.5 3 0.7 0 2.8 3.5 4.2 Figure 2. Transfer Characteristics Figure 1. Output Characteristics 24 1.75 20 1.60 RDS(ON), On-Resistance Normalized RDS(on) (m ı ) 2.1 VGS, Gate-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 16 VGS=4.5V 12 VGS=10V 8 1.4 4 VGS=10V ID=10A 1.45 1.30 VGS=4.5V ID=6A 1.15 1.0 0 1 1 10 20 30 40 50 0 60 25 50 75 100 125 150 Tj( C) ID, Drain Current (A) Tj, Junction Temperature ( C) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature 3 V S T M4470E B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.4 V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 36 20.0 I D =10A Is , S ource-drain current (A) R DS (on) (m ı ) 30 24 125 C 18 12 75 C 25 C 6 0 0 2 4 6 8 10.0 25 C 1.0 10 75 C 125 C 0.2 0.4 0.6 0.8 1.0 1.2 V G S , G ate-S ource Voltage (V ) V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 STM4470E 10 VGS, Gate to Source Voltage (V) 2400 C , C apacitance (pF ) 2000 6 Ciss 1600 1200 800 400 Coss Crss 6 4 2 0 0 0 VDS=15V ID=10A 8 5 10 15 20 25 0 30 4 VDS, Drain-to Source Voltage (V) 8 20 16 12 24 28 32 Qg, Total Gate Charge (nC) Figure 10. Gate Charge Figure 9. Capacitance 50 TD(on) 10 V DS =15V ,ID=1A 1 1 0.1 0.03 6 10 S 10 V G S =10V 1 10 RD ID, Drain Current (A) Switching Time (ns) Tf Tr (O 10 TD(off) 100 60 N) Lim it 600 DC ms s 1s VGS=10V Single Pulse TA=25 C 0.1 60 100 300 600 0m 1 10 30 50 VDS, Drain-Source Voltage (V) Rg, Gate Resistance (Ω) Figure 12. Maximum Safe Operating Area Figure 11.switching characteristics Thermal Resistance Normalized Transient 9 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 t2 0.02 0.01 Single Pulse 0.01 0.00001 1. RthJA (t)=r (t) * R JAth 2. R th JA=See Datasheet (t) 3. TJM-TA = PDM* R JA th 4. Duty Cycle, D=t1/t2 on 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 10 100 1000 STM4470E PACKA GE OUTLINE DIMENSIONS SO-8 1 L E D A C 0.015X45± e B 0.05 TYP. A1 0.008TYP. 0.016 TYP. H MILLIMETERS INCHES SYMBOLS MIN A A1 D E 1.35 0.10 4.80 3.81 H L 5.79 0.41 0± MAX 1.75 0.25 4.98 3.99 6.20 1.27 8± 6 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0± MAX 0.069 0.010 0.196 0.157 0.244 0.050 8± STM4470E SO-8 Tape and Reel Data SO-8 Carrier Tape unit:р PACKAGE SOP 8N 150п A0 6.40 B0 5.20 K0 D0 2.10 ӿ1.5 (MIN) M N 330 ² 1 62 ²1.5 D1 E ӿ1.5 + 0.1 - 0.0 12.0 ²0.3 E1 1.75 E2 5.5²0.05 P1 P2 T 8.0 4.0 2.0²0.05 0.3²0.05 S G R V P0 SO-8 Reel UNIT:р TAPE SIZE 12 р REEL SIZE ӿ330 W W1 H 12.4+ 0.2 16.8- 0.4ӿ12.75 + 0.15 7 K 2.0²0.15