STU411D Green Product S a mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) R DS(ON) (m Ω) Max V DSS ID 40V 15A V DSS ID -40V -12A R DS(ON) (m Ω) Max 32 @ VGS=10V 48 @ VGS=-10V 42 @ VGS=4.5V 68 @ VGS=-4.5V D2 D1 D1/D2 G1 S1 G2 G1 S2 G2 TO-252-4L S1 N-ch S2 P -ch ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed TC=25°C TC=70°C a b d EAS Sigle Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range a TC=25°C TC=70°C THERMAL CHARACTERISTICS a R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. N-Channel P-Channel 40 -40 ±20 ±20 15 -12 Units V V A 12 -10 A 43 8 -36 15 A mJ 11 W 6.7 W -55 to 150 °C 12 60 °C/W °C/W Sep,04,2008 1 www.samhop.com.tw STU411D Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance VGS=0V , ID=250uA Min Typ 40 1 ±10 VDS=32V , VGS=0V VGS= ±20V , VDS=0V VDS=VGS , ID=250uA VGS=10V , ID=15A Max 1.25 1.5 25 3 32 42 Units V uA uA V m ohm VGS=4.5V , ID=13A 32 VDS=5V , ID=15A 17 S VDS=20V,VGS=0V f=1.0MHz 623 95 56 pF pF pF 10.5 10.6 ns ns 39 9.6 ns ns m ohm c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge c VDD=20V ID=1A VGS=10V RGEN=3.3 ohm VDS=20V,ID=15A,VGS=10V 9.5 nC VDS=20V,ID=15A,VGS=4.5V 4.5 1.6 2.3 nC VDS=20V,ID=15A, VGS=10V Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b VGS=0V,IS=2.2A 0.78 nC nC 2.2 A 1.2 V Sep,04,2008 2 www.samhop.com.tw STU411D Ver 1.0 P-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS CISS COSS CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Total Gate Charge Qgs Qgd Gate-Source Charge Min VGS=0V , ID=-250uA -40 Typ -1 ±10 VDS=-32V , VGS=0V VGS= ±20V , VDS=0V -1.25 V uA uA 48 V m ohm VGS=-4.5V , ID=-10A 52 68 m ohm VDS=-5V , ID=-12A 9 S VDS=-20V,VGS=0V f=1.0MHz 895 138 67 pF pF pF 14 14 54 10 ns ns ns ns VDS=-20V,ID=-12A,VGS=-10V 14.5 nC VDS=-20V,ID=-12A,VGS=-4.5V 7 2.1 3.4 nC c VDD=-20V ID=-1A VGS=-10V RGEN=3 ohm VDS=-20V,ID=-12A, VGS=-10V Gate-Drain Charge Diode Forward Voltage -3 Units -1.6 38 VDS=VGS , ID=-250uA VGS=-10V , ID=-12A DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Max c Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Conditions b VGS=0V,IS=-2.0A -0.77 nC nC -2.0 -1.2 A V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V,VGS=10V.(See Figure13) Sep,04,2008 3 www.samhop.com.tw STU411D Ver 1.0 N-Channel 40 20 V G S =10V V G S =4.5V I D, Drain Current(A) I D, Drain Current(A) V G S =4V 32 V G S =3.5V 24 16 V G S =3V 8 0 V G S =2.5V 0 1 0.5 2 1.5 2.5 16 12 T j =125 C 8 25 C -55 C 4 0 3 0 V DS, Drain-to-Source Voltage(V) 60 1.4 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 1.5 48 V G S =4.5V 36 24 V G S =10V 12 8 16 24 32 3.2 4.0 4.8 V G S =4.5V I D =13A 1.3 1.2 V G S =10V I D =15A 1.1 1.0 0.0 40 0 50 25 75 100 125 150 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.2 Vth, Normalized Gate-Source Threshold Voltage 2.4 Figure 2. Transfer Characteristics 72 1 1.6 VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 0 0.8 V DS =V G S I D =250uA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Sep,04,2008 4 www.samhop.com.tw STU411D Ver 1.0 84 20.0 Is, Source-drain current(A) ID=15A R DS(on)(m Ω) 70 56 125 C 42 28 25 C 75 C 14 0 0 2 4 6 8 10.0 5.0 1.0 10 0 0.4 0.8 2.0 1.6 1.2 V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 1200 V GS, Gate to Source Voltage(V) 10 1000 C, Capacitance(pF) 75 C 25 C V GS, Gate-to-Source Voltage(V) 800 Ciss 600 400 Coss 200 Crss 0 0 5 10 15 20 25 VDS=20V ID=15A 8 6 4 2 0 30 0 2 6 4 8 10 12 14 16 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 1000 100 100 I D, Drain Current(A) Switching Time(ns) 125 C TD(off) Tr 10 Tf TD(on) VDS=20V,ID=1A VGS=10V 1 10 RD 3 10 60 100 m it 10 10 1m 0u us s s 1 V G S =10V S ingle P ulse T c=25 C 0.1 Rg, Gate Resistance(Ω) Li 10 m DC s 0.1 1 S( ) ON 1 10 100 VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Sep,04,2008 5 www.samhop.com.tw STU411D Ver 1.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 0.05 P DM 0.02 t1 t2 0.01 1. 2. 3. 4. S ING LE P ULS E 0.01 0.00001 0.0001 0.001 0.01 R ӰJ A (t)=r (t) * R ӰJ A R ӰJ A =S ee Datas heet T J M-T A = P DM* R ӰJ A (t) Duty C ycle, D=t1/t2 0.1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Sep,04,2008 6 www.samhop.com.tw STU411D Ver 1.0 P-Channel 20 15 VGS=-10V VGS=-4.5V VGS=-3.5V -I D, Drain Current(A) -ID, Drain Current(A) 16 12 8 VGS=-8V 4 VGS=-3V 12 9 Tj=125 C 25 C 3 0 0 0 0.5 1 2 1.5 2.5 3 0 -V DS, Drain-to-Source Voltage(V) 100 1.4 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 1.5 80 VGS=-4.5V 40 VGS=-10V 20 4 8 12 16 2.4 3.2 4.0 4.8 VGS=-10V ID=-12A 1.3 1.2 VGS=-4.5V ID=-10A 1.1 1.0 0.0 20 0 25 50 75 100 125 150 T j ( °C ) -ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature 1.3 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1 1.6 Figure 2. Transfer Characteristics 120 60 0.8 -V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 0 -55 C 6 VDS=VGS ID=-250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 ID=-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Sep,04,2008 7 www.samhop.com.tw STU411D Ver 1.0 120 20.0 -Is, Source-drain current(A) ID=-12A R DS(on)(m Ω) 100 80 125 C 60 75 C 40 25 C 20 0 0 2 4 6 8 125 C 1.0 0.4 10 -VGS, Gate-to-Source Voltage(V) 0.6 0.8 1.0 1.2 1.4 Figure 8. Body Diode Forward Voltage Variation with Source Current 1200 -V GS, Gate to Source Voltage(V) 10 Ciss 1000 C, Capacitance(pF) 75 C -V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 800 600 400 Coss 200 Crss 0 0 5 10 15 20 25 VDS=-20V ID=-12A 8 6 4 2 0 30 0 2 6 4 8 10 12 14 -VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 1000 16 100 100 -ID, Drain Current(A) Switching Time(ns) 25 C 10.0 TD(off ) Tr TD(on) Tf 10 10 R 6 10 60 100 m it 10 1m 0u s s 1 V G S =-10V S ingle P ulse T c=25 C 0.1 1 ( Li 10 m DC s VDS=-20V,ID=-1A VGS=-10V 1 DS ) ON 0.1 1 10 100 Rg, Gate Resistance(Ω) -V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Sep,04,2008 8 www.samhop.com.tw STU411D Ver 1.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 0.05 P DM t1 0.02 t2 0.01 1. 2. 3. 4. S ING LE P ULS E 0.01 0.00001 0.0001 0.001 0.01 R ӰJ A (t)=r (t) * R ӰJ A R ӰJ A =S ee Datas heet T J M-T A = P DM* R ӰJ A (t) Duty C ycle, D=t1/t2 0.1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Sep,04,2008 9 www.samhop.com.tw STU411D Ver 1.0 PACKAGE OUTLINE DIMENSIONS E TO-252-4L A b2 C L3 1 D1 D E1 H 1 2 3 4 5 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.200 0.000 0.440 0.635 5.210 0.450 6.000 5.200 6.400 4.400 1.270 9.400 1.397 2.743 0.508 0.890 0.640 0° 7° INCHES MAX 2.387 0.127 0.680 0.787 5.460 0.584 6.223 5.515 6.731 5.004 BSC 10.400 1.770 REF. REF. 1.270 1.010 10 ° REF. MIN 0.087 0.000 0.017 0.025 0.205 0.018 0.236 0.205 0.252 0.173 0.050 0.370 0.055 0.108 0.020 0.035 0.025 0° 7° MAX 0.094 0.005 0.027 0.031 0.215 0.023 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.050 0.040 10° REF. Sep,04,2008 10 www.samhop.com.tw STU411D Ver 1.0 TO-252-4L Tape and Reel Data TO-252-4L Carrier Tape K0 T 6 °Max B0 A0 SECTION A-A P1 P2 E E2 D1 SECTION B-B E1 B 4 ° Max A D0 P0 FEED DIRECTION B A UNIT:р PACKAGE TO-252 (16 р* A0 B0 K0 6.96 ²0.1 10.49 ²0.1 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252-4L Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H 2.2 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Sep,04,2008 11 www.samhop.com.tw