2SA1494 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858) ■Electrical Characteristics ICBO Ratings Unit VCB=–200V –100max µA 36.4±0.3 24.4±0.2 VEB=–6V –100max µA IC=–50mA –200min V VCEO –200 V IEBO VEBO –6 V V(BR)CEO IC –17 A hFE VCE=–4V, IC=–8A 50min∗ IB –5 A VCE(sat) IC=–10A, IB=–1A –2.5max V PC 200(Tc=25°C) W fT VCE=–12V, IE=1A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C ∗hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180) 2-ø3.2±0.1 7 a b 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –40 4 –10 –10 5 –1 1 0.6typ 0.9typ 0.2typ –50mA –5 I B =–20mA 0 0 –1 –2 –3 –4 –1 –10A 0 0 –1 –2 (V C E =–4V) 50 –5 25˚C 100 –30˚C 50 20 –0.02 –10 –17 –0.1 –0.5 f T – I E Characteristics (Typical) –5 –10 –17 10 3m s 10ms –100 Collector-Emitter Voltage V C E (V) –300 nk –10 si –2 at –0.1 10 he Without Heatsink Natural Cooling 120 ite –1 fin –5 160 In Collector Curr ent I C (A) C ith D W –10 –0.5 1000 s Ma xim um Powe r Dissipat io n P C (W) m s 10 100 P c – T a Derating 0m 20 Emitter Current I E (A) 1 Time t(ms) 10 Typ 1 0.1 200 20 0.1 0.5 –50 30 Cut- off Fr equ ency f T (MH Z ) –1 1 Safe Operating Area (Single Pulse) (V C E =–12V) –2 2 Collector Current I C (A) Collector Current I C (A) 22 Transient Thermal Resistance DC Curr ent Gain h FE DC Curr ent Gain h FE Typ 100 0 0.02 –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 125˚C –1 0 Base-Emittor Voltage V B E (V) 200 –0.5 0 –3 (V C E =–4V) 300 ) –5A Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 –5 I C =–15A Collector-Emitter Voltage V C E (V) 10 –0.02 –10 Temp –1 00 m A –2 e Te mp) Temp ) A Weight : Approx 18.4g a. Part No. b. Lot No. –15 (Cas –200m –10 E (V C E =–4V) 125˚C 0mA Collector Current I C (A) Collector Current I C (A) –40 C –17 θ j - a (˚C /W) 0 Collector-Emitter Saturation Voltage V C E (s at) (V ) A .5 –60 –1 –15 mA 3.0 +0.3 -0.1 I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) –3 –1A 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) –17 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 9 21.4±0.3 20.0min Tstg 6.0±0.2 2.1 (Case V External Dimensions MT-200 (Ta=25°C) Conditions –30˚C –200 VCBO Symbol (Case Unit 25˚C Ratings 4.0max ■Absolute maximum ratings (Ta=25°C) Symbol Application : Audio and General Purpose 80 40 5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 2000