2SA1695 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4468) –10max µA V IEBO VEB=–6V –10max µA –140min IC=–50mA V 50min∗ VCE=–4V, IC=–3A A VCE(sat) IC=–5A, IB=–0.5A –0.5max V 100(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 400typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 20.0min –4 PC Tstg a ø3.2±0.1 b IB 2 3 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 5.45±0.1 5.45±0.1 B VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –60 12 –5 –10 5 –0.5 0.5 0.17typ 1.86typ 0.27typ I C – V BE Temperature Characteristics (Typical) –3 –10 A Collector Current I C (A) –8 –100 mA –7 5m A –6 –50mA –4 –25mA –2 I B =–10mA 0 –1 0 –2 –3 –4 –2 –1 –2 I C =–10A 0 0 –0.5 –1.0 –1.5 0 –1 (V C E =–4V) 200 Typ 50 –1 –5 Transient Thermal Resistance DC Curr ent Gain h F E 125˚C 100 25˚C 100 –30˚C 50 30 –0.02 –10 –0.1 –0.5 –1 –5 –10 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 f T – I E Characteristics (Typical) 100 1000 2000 Time t(ms) Collector Current I C (A) Collector Current I C (A) –1.5 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 200 Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 100 –0.1 –3 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 nk Emitter Current I E (A) 10 si 1 50 at 0.1 he 0 0.02 ite ms Without Heatsink Natural Cooling fin 10 –0.5 In s –1 ith 3m s 10 DC –5 0m Typ 10 20 Co lle ctor Cu rren t I C ( A) –10 W Maximu m Power Diss ip ation P C (W) –30 30 Cut-o ff F requ ency f T (MH Z ) DC Curr ent Gain h F E 0 –2.0 (V C E =–4V) –0.5 –4 Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 –6 –5A Collector-Emitter Voltage V C E (V) 30 –0.02 –8 p) 0m Tem –15 se 0 (Ca –2 ˚C 0 (V C E =–4V) 125 –3 θ j- a ( ˚C/W) 00 A 0m Collector-Emitter Saturation Voltage V C E (s at) (V ) –4 A 0m 1.4 E V CE ( sat ) – I B Characteristics (Typical) –10 mA C Weight : Approx 6.0g a. Part No. b. Lot No. Collector Current I C (A) I C – V CE Characteristics (Typical) 0.65 +0.2 -0.1 ) hFE Temp V(BR)CEO A 2.0±0.1 (Case V –10 4.8±0.2 –30˚C –6 IC mp) VEBO e Te –140 (Cas VCEO 15.6±0.4 9.6 25˚C V 1.8 VCB=–140V –140 5.0±0.2 ICBO VCBO 2.0 Unit Symbol External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit 4.0 ■Electrical Characteristics Conditions Ratings 19.9±0.3 Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 29