(2 k Ω)(6 5 0Ω) E 2SB1257 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) A –10max µA –60min V hFE VCE=–4V, IC=–3A 2000min IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max PC 25(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max V Tj 150 °C fT VCE=–12V, IE=0.2A 150typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 75typ pF Tstg 3.3 3.0 V IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –30 10 –3 –10 5 –10 10 0.4typ 0.8typ 0.6typ –2 –1 0 –1 –2 –3 –4 –5 –3A –1 –2A –0.5 Collector-Emitter Voltage V C E (V) –1 –1 –5 –10 h FE – I C Temperature Characteristics (Typical) 8000 DC Cur r ent Gai n h F E 1000 500 100 1000 12 5˚C 25 500 ˚C –3 0˚C 100 50 50 –0.1 –0.5 –1 20 –0.02 –5 –6 –0.05 –0.1 Collector Current I C (A) –0.5 –1 –5 –6 1 0.7 Safe Operating Area (Single Pulse) 1m si nk 4 2 at 1 Emitter Current I E (A) 0x he –0.1 –0.07 –3 1 00x 1 0 10 ite Without Heatsink Natural Cooling 40 150x150x2 fin –0.5 20 In –1 Natural Cooling Silicone Grease Heatsink: Aluminum in mm ith 80 1000 W 120 s 160 DC m Typ s 10 200 100 25 –5 0.5 10 P c – T a Derating –10 0.1 1 Time t(ms) (V C E =–12V) 240 –2 –2.2 5 Collector Current I C (A) f T – I E Characteristics (Typical) 0 0.05 –1 θ j-a – t Characteristics Transient Thermal Resistance 5000 Co lle ctor Cu rre nt I C ( A) DC Cur r ent Gai n h F E (V C E =–2V) Typ 20 –0.02 0 Base-Emittor Voltage V B E (V) (V C E =–2V) Cut- off F req uency f T (M H Z ) 0 –50 Base Current I B (mA) h FE – I C Characteristics (Typical) 8000 5000 –2 I C =–1A –0.6 –0.2 –6 –3 mp) –2 θ j - a (˚ C/W) 0 (V C E =–2V) e Te –0.8mA –3 E (Cas =– –1.0mA Weight : Approx 2.0g a. Part No. b. Lot No. –4 –3 Maxim um Power Dissipation P C (W) Collector Current I C (A) –1.2 mA –4 C 3.35 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) –1 .5 m A IB –5 0.65 +0.2 -0.1 1.5 125˚C Collector-Emitter Saturation Voltage V C E (s at) (V ) A mA 2. 3m – 1 .8 4.4 B V CE ( sat ) – I B Characteristics (Typical) +0.2 -0.1 5.45±0.1 1.5 RL (Ω) 0.8 2.15 1.05 VCC (V) –6 1.75 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.3±0.2 a b ) –4(Pulse–6) IC VEB=–6V IC=–10mA 3.45 ±0.2 ) V(BR)CEO 5.5±0.2 Temp IEBO V 15.6±0.2 Temp V –6 µA (Case –60 VEBO –10max –30˚C VCEO VCB=–60V 0.8±0.2 ICBO Unit 5.5 V Ratings 1.6 –60 External Dimensions FM20(TO220F) (Ta=25°C) Conditions (Case VCBO Symbol 25˚C Unit 9.5±0.2 Ratings 23.0±0.3 Symbol C Application : Driver for Solenoid, Relay and Motor and General Purpose ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) B Equivalent circuit 16.2 Darlington 50x50x2 Without Heatsink 2 –5 –10 Collector-Emitter Voltage V C E (V) –70 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 39