(2 k Ω) (80Ω) E 2SB1383 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2083) –10max µA V IEBO VEB=–6V –10max mA –120min 2000min VCE(sat) IC=–12A, IB=–24mA –1.8max VBE(sat) IC=–12A, IB=–24mA –2.5max V VCE=–12V, IE=1A 50typ MHz VCB=–10V, f=1MHz 230typ pF W Tj 150 °C fT –55 to +150 °C COB Tstg V 1.05 +0.2 -0.1 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –24 2 –12 –10 5 –24 24 1.0typ 3.0typ 1.0typ –1.0mA –5 I B =–0.6mA 0 –1 –2 –3 –4 –5 –12A –1 –6A 0 –0.5 –1 –6 –10 –100 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) Typ 5000 1000 500 –10 –40 12 5000 5˚C 25 Transient Thermal Resistance 10000 10000 DC Cur rent Gain h FE 20000 ˚C –30 ˚C 1000 500 200 –0.2 –0.5 Collector Current I C (A) –1 –5 –10 –40 ) 0.1 1 10 1000 P c – T a Derating 120 M aximum Power Dissipa ti on P C (W) Co lle ctor Cu rre nt I C (A) nk Collector-Emitter Voltage V C E (V) –200 si –100 at –50 he –10 ite –5 fin –0.2 –3 In Without Heatsink Natural Cooling ith –1 100 W s –5 –0.5 10 s 10 1m 20 DC –10 m 30 10 40 5 100 –50 Typ Emitter Current I E (A) mp 0.5 Time t(ms) 50 1 Te 1 –100 0.5 –2.6 2 Safe Operating Area (Single Pulse) 60 –2 θ j-a – t Characteristics (V C E =–12V) 0 0.1 –1 Collector Current I C (A) f T – I E Characteristics (Typical) Cut- off F req uency f T (MH Z ) DC Cur rent Gain h FE 20000 –5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –1 0 –500 Base Current I B (mA) h FE – I C Characteristics (Typical) –0.5 –10 –5 Collector-Emitter Voltage V C E (V) 200 –0.2 –15 –30 –1.5mA –2 –20 se –2.5m A I C =–25A (V C E =–4V) (Ca –4 .0m A 0 –25 5˚C Collector Current I C (A) –20 –10 –3 12 –6 .0 m A –15 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) .0 1.4 E Weight : Approx 6.0g a. Part No. b. Lot No. θ j- a ( ˚ C/W) –8 mA C V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –25 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) I C – V CE Characteristics (Typical) 2 3 ) 120(Tc=25°C) ø3.2±0.1 b emp A PC a p) –2 em IB V eT hFE 2.0±0.1 Cas V(BR)CEO A 4.8±0.2 ˚C ( V –25(Pulse–40) 19.9±0.3 IC=–25mA VCE=–4V, IC=–12A –6 IC VEBO 15.6±0.4 9.6 2.0 VCB=–120V 1.8 –120 ICBO 5.0±0.2 VCEO Unit eT V Ratings Cas –120 C External Dimensions MT-100(TO3P) (Ta=25°C) Conditions Symbol C( VCBO ■Electrical Characteristics 25˚ Unit 4.0 Ratings Symbol Equivalent circuit 4.0max ■Absolute maximum ratings (Ta=25°C) B Application : Chopper Regulator, DC Motor Driver and General Purpose 20.0min Darlington 50 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 45