(7 0 Ω ) E 2SB1559 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2389) µA V IEBO VEB=–5V –100max µA –5 V V(BR)CEO IC=–30mA –150min V –8 A hFE VCE=–4V, IC=–6A 5000min∗ VCEO –150 VEBO IC –1 A VCE(sat) IC=–6A, IB=–6mA –2.5max PC 80(Tc=25°C) W VBE(sat) IC=–6A, IB=–6mA –3.0max V Tj 150 °C fT VCE=–12V, IE=1A 65typ MHz –55 to +150 °C VCB=–10V, f=1MHz 160typ pF COB a 4.8±0.2 2.0±0.1 ø3.2±0.1 b IB Tstg 15.6±0.4 9.6 1.8 –100max V 5.0±0.2 VCB=–160V –160 2.0 ICBO VCBO 19.9±0.3 Unit Symbol C External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit 4.0 ■Electrical Characteristics Conditions Ratings Symbol V 2 4.0max ■Absolute maximum ratings (Ta=25°C) Equivalent circuit Application : Audio, Series Regulator and General Purpose 20.0min Darlington B 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –60 10 –6 –10 5 –6 6 0.7typ 3.6typ 0.9typ C 1.4 E Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical) 0 0 –2 –4 0 –0.2 –6 –0.5 –1 Collector-Emitter Voltage V C E (V) –5 –10 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 40,000 50000 10,000 5,000 –1 –5 –8 Transient Thermal Resistance Typ DC Cur rent Gain h FE 25˚C 10000 –30˚C 5000 1000 –0.2 –1 –5 –8 1 5 10 C m s s ite he 40 at si nk –0.1 fin Without Heatsink Natural Cooling 20 In –1 –0.5 60 ith Collector Curre nt I C (A) D 10 0m W –5 40 500 1000 2000 80 –10 60 mp) 50 100 P c – T a Derating –20 Typ ) 10 Time t(ms) Safe Operating Area (Single Pulse) 80 e Te 0.5 (V C E =–12V) 100 –3 1 Collector Current I C (A) f T – I E Characteristics (Typical) –2 4 0.2 –0.5 Collector Current I C (A) Cas –1 θ j-a – t Characteristics M aximum Po wer Dissipation P C (W) DC C urrent G ain h FE 125˚C Cut -off Fre quen cy f T ( MH Z ) 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.5 0 –50 –100 –200 Base Current I B (mA) h FE – I C Characteristics (Typical) 2,000 –0.2 p) –2 emp –1 –4 ˚C ( I C =–4A –30 –6A –6 Tem I B =–0.3mA –2 –8A se T –0.5m A –4 –2 se –0.8m A (Ca –1 .0 mA –6 (V C E =–4V) –8 –3 (Ca A – 1 .5 m –1. 3m A 25˚C A ˚C – 1 .8 m 125 mA θ j - a (˚ C/W) –2.0 Collector Current I C (A) .5 Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) –10 –8 –2 mA m A I C – V CE Characteristics (Typical) 5.45±0.1 B 20 Without Heatsink 0 0.02 0.05 0.1 0.5 1 Emitter Current I E (A) 5 8 –0.05 –2 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 47