(7 0 Ω ) E 2SB1588 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2439) Ratings Unit VCBO –160 V ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V Ratings Unit 15.6±0.2 –5 V V(BR)CEO IC=–30mA –150min IC –10 A hFE VCE=–4V, IC=–7A 5000min∗ IB –1 A VCE(sat) IC=–7A, IB=–7mA –2.5max PC 80(Tc=25°C) W VBE(sat) IC=–7A, IB=–7mA –3.0max V Tj 150 °C fT VCE=–12V, IE=2A 50typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 230typ pF 23.0±0.3 VEBO 3.0 3.3 1.75 1.05 +0.2 -0.1 5.45±0.1 –4 I B =–0.4mA –2 0 0 –2 –4 –7A I C =–5A –1 0 –0.2 –0.5 –1 –5 –10 (V C E =–4V) 50,000 DC Cur rent Gain h FE Typ 10,000 5,000 125˚C 10,000 25˚C 5,000 –30˚C 1,000 –5 –10 500 –0.2 –0.5 Collector Current I C (A) –1 –5 –10 1 0.5 0.1 5 P c – T a Derating m s s DC si nk Without Heatsink Natural Cooling 40 at –0.5 he –1 60 ite Maxim um Power Dissip ation P C (W) 10 0m fin Co lle ctor Cu rre nt I C (A) 10 –5 20 20 –0.1 0.5 1 Emitter Current I E (A) 5 10 –0.05 –3 2000 In 40 500 1000 ith Typ 50 100 80 –10 0.05 0.1 10 W Cut -off Fre quen cy f T (M H Z ) 1 Time t(ms) –30 80 –2.5 3 Safe Operating Area (Single Pulse) 100 –2 θ j-a – t Characteristics (V C E =–12V) 0 0.02 –1 Collector Current I C (A) f T – I E Characteristics (Typical) 60 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 40,000 DC Cur rent Gain h FE 0 –50 –100 –200 Base Current I B (mA) (V C E =–4V) –1 –4 –2 –6 h FE – I C Characteristics (Typical) –0.5 –6 ) –10A Collector-Emitter Voltage V C E (V) 1,000 –0.2 –8 ) –0.6m A –2 (V C E =–4V) Temp –0.8m A –6 –10 Temp –1.0 mA –3 Transient Thermal Resistance Collector Current I C (A) –1. 2mA I C – V BE Temperature Characteristics (Typical) (Case –1 .5m A –8 V CE ( sat ) – I B Characteristics (Typical) (Case mA 1.2typ E (Cas – 2 .0 Collector-Emitter Saturation Voltage V C E (s a t) (V ) –2 A –10 mA –10 m .5 3.0typ C mp) I C – V CE Characteristics (Typical) 0.8typ 7 –7 Weight : Approx 6.5g a. Part No. b. Lot No. tf (µs) B 3.35 1.5 e Te 5 –10 tstg (µs) 4.4 125˚C –7 ton (µs) IB2 (mA) IB1 (mA) Collector Current I C (A) 10 VBB2 (V) VBB1 (V) 0.65 +0.2 -0.1 5.45±0.1 1.5 θ j - a ( ˚C/W) –70 IC (A) 0.8 2.15 ■Typical Switching Characteristics (Common Emitter) RL (Ω) 3.45 ±0.2 ø3.3±0.2 a b V ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) VCC (V) 5.5±0.2 –30˚C Tstg 0.8±0.2 Conditions 5.5 Symbol 25˚C Symbol External Dimensions FM100(TO3PF) (Ta=25°C) 1.6 ■Electrical Characteristics (Ta=25°C) C Application : Audio, Series Regulator and General Purpose 9.5±0.2 ■Absolute maximum ratings Equivalent circuit 16.2 Darlington B –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 51