(7 0 Ω ) E 2SB1647 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2560) –100max µA V IEBO VEB=–5V –100max µA V VEBO –5 V V(BR)CEO IC –15 A hFE IC=–30mA –150min VCE=–4V, IC=–10A 5000min∗ A VCE(sat) IC=–10A, IB=–10mA –2.5max IC=–10A, IB=–10mA –3.0max V VCE=–12V, IE=2A 45typ MHz VCB=–10V, f=1MHz 320typ IB –1 PC 130(Tc=25°C) W VBE(sat) Tj 150 °C fT –55 to +150 °C Tstg COB 15.6±0.4 9.6 2.0 VCB=–150V 1.8 –150 ICBO a pF ø3.2±0.1 2 3 5.45±0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –40 4 10 –10 5 –10 10 0.7typ 1.6typ 1.1typ –4 I C =–5A –1 –0.5 –1 –10 10,000 5,000 –1 –5 –10 –15 25˚C –30˚C 10000 5000 1000 –0.2 –0.5 Collector Current I C (A) –1 –5 –10 –15 p) 1 at si nk Without Heatsink Natural Cooling he –0.5 ite –1 100 fin M aximum Po wer Dissipat io n P C (W) s In Collect or Cur ren t I C ( A) m s ith DC 10 0m 50 –0.1 0.5 1 Emitter Current I E (A) 52 5 10 1000 2000 P c – T a Derating –5 –0.05 –3 100 Time t(ms) W –10 0.05 0.1 ) 10 130 10 Cut -off Fre quen cy f T (MH Z ) Tem 0.1 –50 20 emp 0.5 Safe Operating Area (Single Pulse) 40 –3 1 (V C E =–12V) 60 –2 3 Collector Current I C (A) f T – I E Characteristics (Typical) 0 0.02 –1 θ j-a – t Characteristics θ j- a ( ˚ C/ W) 125˚C Transient Thermal Resistance Typ –0.5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) 50000 1,000 –0.2 0 –50 –100 –200 h FE – I C Temperature Characteristics (Typical) DC C urrent G ain h FE DC C urrent G ain h FE –5 Base Current I B (mA) (V C E =–4V) 50,000 –5 –30 0 –0.2 –6 Collector-Emitter Voltage V C E (V) h FE – I C Characteristics (Typical) se T I C =–1 0A –10 se I C =–15A (Ca –2 (V C E =–4V) (Ca –5 –2 –15 ˚C I B =–0.3mA 0 –3 25˚C –0. 5m A 0 I C – V BE Temperature Characteristics (Typical) 125 –0.8 mA –10 1.4 E Weight : Approx 6.0g a. Part No. b. Lot No. Collector Current I C (A) A m –2 Collector Current I C (A) –1 .0m A C V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) –1.5mA 0.65 +0.2 -0.1 5.45±0.1 B VCC (V) –15 2.0±0.1 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) –50mA –10mA –3mA 4.8±0.2 b V ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) I C – V CE Characteristics (Typical) 5.0±0.2 VCEO Unit mp) V Ratings e Te –150 External Dimensions MT-100(TO3P) (Ta=25°C) Conditions Cas VCBO ■Electrical Characteristics Symbol C ˚C ( Unit 4.0 Ratings 19.9±0.3 Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) Equivalent circuit Application : Audio, Series Regulator and General Purpose 20.0min Darlington B –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150