2SC3852/3852A High hFE LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor IC 3 A V(BR)CEO VEB=6V V µA 100max IC=25mA 60min 80min V 1 A hFE VCE=4V, IC=0.5A 500min PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=50mA 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF Tstg 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 20 20 1.0 10 –5 15 –30 0.8typ 3.0typ 1.2typ 1mA 0.5mA 0 0 1 2 3 4 5 0.5 0 0.001 0.005 0.01 0.05 0.1 0.5 125˚C Transient Thermal Resistance D C Cur r ent Gai n h F E 1000 Typ 500 1 3 25 ˚C 500 – 3 0 ˚C 100 0.01 0.1 Collector Current I C (A) 1 3 p) 100 m s s si nk –2 at –1 10 Without Heatsink 0.05 –0.5 he 0.1 ite Without Heatsink Natural Cooling fin 0.5 20 In DC 1 ith Collecto r Curr ent I C (A) 10 0m W 10 1000 P c – T a Derating s Typ 78 10 1m 20 –0.05 –0.1 1 30 10 Emitter Current I E (A) V CB =10V I E =–2A Time t(ms) 10 5 0 –0.005 –0.01 1 Safe Operating Area (Single Pulse) (V C E =12V) 30 0.5 5 Collector Current I C (A) f T – I E Characteristics (Typical) 1.0 1.1 0.5 θ j-a – t Characteristics 0.5 Maxim um Power Dissipatio n P C ( W) D C Cur r ent Gai n h F E (V C E =4V) 2000 0.5 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 2000 Cu t-of f Fr eque ncy f T (MH Z ) 0 1 Base Current I B (A) (V C E =4V) 0.1 em 2A I C =1A 6 h FE – I C Characteristics (Typical) 100 0.01 1 3A Collector-Emitter Voltage V C E (V) 1000 2 eT 2mA 1 1.0 Cas 3mA ˚C ( 5mA 2 125 8mA (V CE =4V) 3 Collector Current I C (A) A I C – V BE Temperature Characteristics (Typical) 1.0 θ j - a ( ˚C/W) =1 Collector-Emitter Saturation Voltage V C E (sa t) (V ) Collector Current I C (A) IB 2m Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 2.4±0.2 2.2±0.2 VCC (V) 3 4.0±0.2 3.9 IB ø3.3±0.2 a b ) IEBO Temp V (Case 6 µA 100 –30˚C VEBO 80 0.8±0.2 VCB= ±0.2 ICBO mp) V e Te V 80 4.2±0.2 2.8 c0.5 (Cas 100 60 10.1±0.2 25˚C 80 VCEO Unit 16.9±0.3 VCBO Conditions 13.0min Symbol Unit External Dimensions FM20(TO220F) (Ta=25°C) Ratings 2SC3852 2SC3852A 10max 8.4±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3852 2SC3852A Application : Driver for Solenoid and Motor, Series Regulator and General Purpose 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 50 100 Ambient Temperature Ta(˚C) 150