SANKEN 2SC4388_01

2SC4388
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1673)
V
ICBO
VCB=200V
10max
µA
VCEO
180
V
IEBO
VEB=6V
10max
µA
IC=50mA
180min
VCE=4V, IC=3A
50min∗
V
IB
4
A
VCE(sat)
IC=5A, IB=0.5A
2.0max
V
PC
85(Tc=25°C)
W
fT
VCE=12V, IE=–0.5A
20typ
MHz
Tj
150
°C
COB
VCB=10V, f=1MHz
300typ
–55 to +150
∗hFE Rank
°C
pF
1.75
16.2
Tstg
ø3.3±0.2
a
b
3.0
hFE
1.05 +0.2
-0.1
5.45±0.1
5.45±0.1
1.5
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
40
4
10
10
–5
1
–1
0.5max
1.8max
0.6max
I B =20mA
0
0
1
2
3
I C =10A
0
4
0
0.5
1.0
1.5
h FE – I C Temperature Characteristics (Typical)
(V C E =4V)
300
200
0.5
1
5
Transient Thermal Resistance
DC Cur rent Gain h FE
Typ
50
100
25˚C
50
–30˚C
20
0.02
10 15
0.1
Collector Current I C (A)
1
0.5
2
1
5
10 15
θ j-a – t Characteristics
3
1
0.5
0.1
1
10
100
1000 2000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
30
40
100
10
Typ
5
he
at
si
nk
Without Heatsink
Natural Cooling
ite
0.5
60
fin
1
80
In
10
s
DC
ith
20
0m
s
W
Collect or Cur ren t I C (A)
10
m
Maxim um Power Dissipation P C (W)
10
Cut- off F req uency f T (M H Z )
DC Curr ent Gain h F E
125˚C
0.1
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
20
0.02
0
2.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
mp)
5A
Collector-Emitter Voltage V C E (V)
100
5
e Te
1
(Cas
50mA
5
E
10
25˚C
100 mA
2
mp)
20 0m A
10
e Te
A
C
(V C E =4V)
Cas
300m
3.35
Weight : Approx 6.5g
a. Part No.
b. Lot No.
15
3
˚C (
mA
125
0
50
Collector Current I C (A)
A
0.65 +0.2
-0.1
1.5
I C – V BE Temperature Characteristics (Typical)
θ j - a (˚C /W)
Collector Current I C (A)
7
m
00
4.4
B
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
1A
15
0.8
2.15
O(50 to 100), P(70 to 140), Y(90 to 180)
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
3.45 ±0.2
Temp)
V(BR)CEO
A
5.5±0.2
(Case
V
15
15.6±0.2
23.0±0.3
6
IC
0.8±0.2
Unit
200
5.5
Unit
Ratings
1.6
Ratings
VCBO
VEBO
External Dimensions FM100(TO3PF)
(Ta=25°C)
Conditions
3.3
Symbol
–30˚C
Symbol
■Electrical Characteristics
9.5±0.2
■Absolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
40
20
0.1
0
–0.02
–0.1
–1
Emitter Current I E (A)
–10
0.05
3
5
10
50
100
Collector-Emitter Voltage V C E (V)
200
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
103