SANKEN 2SC4301_01

2SC4301
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose
Unit
VCB=800V
100max
µA
VCEO
800
V
IEBO
VEB=7V
100max
µA
7
V
V(BR)CEO
IC=10mA
800min
V
7(Pulse14)
A
hFE
VCE=4V, IC=3A
10 to 30
IB
3.5
A
VCE(sat)
IC=3A, IB=0.6A
0.5max
PC
80(Tc=25°C)
W
VBE(sat)
IC=3A, IB=0.6A
1.2max
V
Tj
150
°C
fT
VCE=12V, IE=–1A
6typ
MHz
°C
COB
VCB=10V, f=1MHz
105typ
3.3
3.0
V
1.05 +0.2
-0.1
1.5
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
250
83
3
10
–5
0.45
–1.5
1max
5max
1max
0
1
2
3
0.05
0.1
Collector-Emitter Voltage V C E (V)
5
˚C
–5
0.5
1
10
0.1
0.5
1
5
7
t s tg
5
VCC 250V
I C :I B1 :I B2 =2:0.3:–1 Const.
1
tf
0.5
t on
0.2
0.1
0.5
20
10
5
7
p)
0.5
0.1
1
10
100
1000
P c – T a Derating
ite
he
40
at
si
nk
Ma xim um Powe r Dissipation P C (W)
fin
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty :less than1%
60
In
Collect or Cur ren t I C (A)
)
mp)
1
ith
1
0.5
1.2
80
5
Without Heatsink
Natural Cooling
1.0
Time t(ms)
10
1
0.8
W
Co lle ctor Cu rren t I C (A)
1
s
5
0.6
2
20
0µ
0.4
θ j-a – t Characteristics
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
10
0.2
Collector Current I C (A)
Collector Current I C (A)
0.5
Transient Thermal Resistance
t on • t s t g• t f ( µ s)
Sw it ching Time
DC C urrent G ain h FE
C
–55˚C
0.05
0
Base-Emittor Voltage V B E (V)
10
5
0.02
e Te
0
5 7
t on • t stg • t f – I C Characteristics (Typical)
50
5˚
(Cas
5˚C
(V C E =4V)
12
125˚C
2
Collector Current I C (A)
h FE – I C Characteristics (Typical)
25˚C
4
Temp
Collector Current I C (A)
)
emp
12
V C E (sat)
0
0.02
4
(C
θ j - a (˚C /W )
0
emp
ase T
eT
I B =100mA
2
)
125˚C
(V CE =4V)
as
200mA
p)
ase Tem
25˚C (C
E
6
)
(Case Temp
(C
300 mA
C
Weight : Approx 6.5g
a. Part No.
b. Lot No.
7
V B E (sat)
–55˚C
3.35
1.5
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
1
4.4
˚C
Collector Current I C (A)
500mA
0.65 +0.2
-0.1
5.45±0.1
25
Collector-Emitter Saturation Voltage V C E (s at) (V )
Base-Emitter Saturation Voltage V B E (s at) (V)
6
4
B
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
700m A
0.8
2.15
5.45±0.1
VCC
(V)
1A
1.75
pF
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
ø3.3±0.2
a
b
ase Tem
–55 to +150
3.45 ±0.2
(Case
Tstg
5.5±0.2
–55˚C (C
IC
15.6±0.2
25˚C
VEBO
0.8±0.2
Ratings
ICBO
5.5
Conditions
V
1.6
Unit
900
23.0±0.3
Ratings
VCBO
Symbol
External Dimensions FM100(TO3PF)
(Ta=25°C)
9.5±0.2
Symbol
■Electrical Characteristics
16.2
■Absolute maximum ratings (Ta=25°C)
20
Without Heatsink
0.1
50
100
500
Collector-Emitter Voltage V C E (V)
100
1000
0.1
50
100
500
Collector-Emitter Voltage V C E (V)
1000
3.5
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150