SDC03 NPN Darlington With built-in avalanche diode Absolute maximum ratings External dimensions E Electrical characteristics (Ta=25°C) Symbol Ratings Unit Symbol VCBO 60±10 V ICBO VCEO 60±10 V IEBO SD (Ta=25°C) Specification min typ max 1.1 ••• Unit Conditions 10 µA VCB=50V 3.5 mA VEB=6V V VEBO 6 V VCEO 50 60 70 IC 1.5 A hFE 2000 5000 12000 ICP 2.5 (PW≤1ms, Du≤10%) A VCE(sat) 1.2 1.4 V IB 0.1 A VBE(sat) 1.8 2.2 V PT 3 (Ta=25°C) W VFEC 1.3 1.8 V IFEC=1A Tj 150 °C ton 0.5 µs VCC 30V, Tstg –40 to +150 °C tstg 4.0 µs IC=1A, θ j–a 41.6 °C/W tf 1.0 µs IB1=–IB2=2mA fT 50 MHz VCE=12V, IE=–0.1A Cob 25 pF VCB=10V, f=1MHz ■Equivalent circuit diagram 15,16 1 13,14 11,12 3 5 IC=10mA VCE=4V, IC=1A IC=1A, IB=2mA 9,10 7 R1 R2 2 4 6 8 R1: 3.5kΩ typ R2: 200Ω typ Characteristic curves IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) 2.5 2m A 1m A IB=10mA 2.0 hFE-IC Temperature Characteristics (Typical) (VCE=4V) 10000 (VCE=4V) 10000 typ mA 0.6 5000 m 0.4 5000 °C 25 =1 5°C 7 Ta °C 25 C 0° –3 A A .3m 0 1.0 1000 1000 hFE hFE IC (A) 1.5 500 500 100 100 0.5 0 0 1 2 3 4 6 5 50 0.03 0.05 0.1 0.5 VCE (V) VCE(sat)-IC Temperature Characteristics (Typical) 1 50 0.03 0.05 2.5 0.5 1 2.5 IC (A) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical) (IC / IB=1000) 3 0.1 IC (A) (VCE=4V) 2.5 3 2.0 –30°C 1 2 IC=2A 1.0 1A 1 1.5 Ta= 125 75°C °C 25°C –30°C 75°C 25°C IC (A) VCE (sat) (A) VCE (sat) (V) Ta=125°C 2 0.5A 0.5 0 0.2 0.5 1 0 0.1 2.5 0.5 1 5 10 0 0 50 100 1 θ j-a-PW Characteristics PT-Ta Characteristics 50 3 2 Safe Operating Area (SOA) 5 4 10 1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation 0µ 3 S 1m S 2 10 2 5 1 IC (A) PT (W) 10 mS θ j–a (°C / W) 3 VBE (V) IB (mA) IC (A) 1 0.5 1 Single Pulse 0.1 Without Heatsink Ta=25°C 1 1 5 10 50 100 PW (mS) 194 500 1000 0 0 50 100 Ta (°C) 150 0.05 3 5 10 50 VCE (V) 100