SDC06 NPN With built-in avalanche diode Absolute maximum ratings External dimensions E Electrical characteristics (Ta=25°C) SD (Ta=25°C) Specification min typ max Symbol Ratings Unit Symbol VCBO 30 to 45 V ICBO VCEO 30 to 45 V IEBO VEBO 6 V VCEO 30 IC 2 A hFE 400 ICP 3 (PW≤1ms, Du≤10%) A IB 30 mA PT 3 (Ta=25°C) W VFEC V IFEC=1A Tj 150 °C ton 1.2 µs VCC 10V, Tstg –40 to +150 °C tstg 18.0 µs IC=0.5A, θ j–a 41.6 °C/W tf 3.6 µs IB1=5mA, IB2=0A fT 20 MHz VCE=12V, IE=–0.2A Cob 50 pF VCB=10V, f=1MHz mJ L=10mH, Single pulse 1.2 13,14 3 RB 11,12 5 RB RBE RBE 2 RB: 800Ω typ 10 µA VCB=30V mA VEB=6V 45 V IC=10mA 2000 VCE=4V, IC=0.5A 0.2 V IC=0.5A, IB=5mA 0.6 V IC=1A, IB=5mA 40 RB RBE 4 Conditions 9,10 7 RB Unit 2.8 2.0 ES/B 15,16 700 VCE(sat) ■Equivalent circuit diagram 1 ••• RBE 6 8 RBE: 2kΩ typ Characteristic curves IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) (VCE=4V) 1000 3 12 m A IB=30mA hFE-IC Temperature Characteristics (Typical) (VCE=4V) 1000 typ 8mA 5mA 500 500 2 Ta=125°C 75°C hFE hFE IC (A) 3mA 2mA 25°C 1 –30°C 1mA 0 0 1 2 3 4 5 6 100 0.03 0.05 0.1 0.5 VCE (V) VCE(sat)-IC Temperature Characteristics (Typical) 3 100 0.03 0.05 0.1 0.5 1 3 IC (A) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical) (IC / IB=100) 3 1 =1 25 °C 75° C 25 °C VCE (sat) (V) 2 Ta VCE (sat) (V) 1 IC (A) 1 IC=1A IC=0.5A –30°C 0 0.2 0.5 1 0 1 3 5 IC (A) 10 30 IB (mA) θ j-a-PW Characteristics PT-Ta Characteristics 50 3 Safe Operating Area (SOA) 5 4 1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation 3 1mS 2 5 1 0.5 1 1 1 5 10 50 100 PW (mS) 196 1 IC (A) 10 PT (W) θ j–a (°C / W) 2 500 1000 0 0 50 100 Ta (°C) 150 0.1 5 Single Pulse Without Heatsink Ta=25°C 10 50 VCE (V)