1-1-3 DC/DC Converter ICs SI-8000Y Series Current Full-Mold, Mode SeparateControl ExcitationStep-down Step-down Switching Switching ModeMode Regulator ICs ■Features ■Absolute Maximum Ratings • Compact (equivalent to TO220) full-mold package Parameter Input Voltage • Output current: 8.0 A Power Dissipation • High efficiency: 86% • Built-in reference oscillator (130 kHz) • Built-in drooping-type-overcurrent protection and thermal protection circuits Symbol Ratings VIN 45 Unit V PD1 20.8(With infinite heatsink) W PD2 1.8(Without heatsink, stand-alone operation) W Junction Temperature Tj –30 to +150 °C Storage Temperature Tstg –40 to +150 °C Thermal Resistance (Junction to Case) θj-c 6 °C/W Thermal Resistance (Junction to Ambient Air) θj-a 66.7 °C/W • Built-in soft start circuit (Output ON/OFF available) • Low current consumption during off ■Applications • • • • AV equipment OA equipment Gaming equipment Onboard local power supplies ■Recommended Operating Conditions Raings Symbol Parameter SI-8010Y SI-8050Y Unit Input Voltage Range VIN 8 or VO+3* to 43 8 to 43 V Output Voltage Range Vo 1 to 15 5 V Output Current Range Io 0 to 8.0 A Operating Junction Temperature Range Tjop –30 to +135 °C Operating Temperature Range Top –30 to +85 °C *: The minimum value of the input voltage range is 8 V or Vo + 3V, whichever is higher. ■Electrical Characteristics Ratings Parameter Symbol SI-8010Y* mIN. Output Voltage (Reference voltage for SI-8010Y) VO(VREF) 0.98 Conditions Temperature Coefficient of Output Voltage ∆VO/∆T(∆VREF/∆T) (Reference voltage temperature coefficient for SI-8010Y) Conditions η Efficiency Conditions Oscillation Frequency Line Regulation Load Regulation Overcurrent Protection Starting Current fo Conditions ∆VOLINE Iq Quiescent Circuit Current Conditions Iq(OFF) Conditions Outflow Current at Low Voltage EN/SS Pin* Low Level Voltage Error Amplifier Voltage Gain ISSL Conditions 1.00 1.02 4.90 AEA max. 5.00 5.10 VIN=30V, Io=0.1A ±0.1 ±0.5 VIN=30V, Io=0.1A, Ta=0 to 100°C VIN=30V, Io=0.1A, Ta=0 to 100°C 86 86 VIN=30V, Io=3A VIN=30V, Io=3A 130 130 VIN=30V, Io=3A VIN=30V, Io=3A 90 mV/°C kHz 90 VIN=10 to 43V, Io=3A 90 30 90 VIN=30V, Io=0.1 to 8A 8.1 8.1 VIN=20V 8 8 VIN=30V, Io=0A, EN/SS=open 500 VIN=30V, EN/SS=0V 10 200 VIN=30V, EN/SS=0V mV mA 500 VIN=30V, EN/SS=0V 30 mV A VIN=20V VIN=30V, Io=0A, EN/SS=open 200 V % 30 VIN=30V, Io=0.1 to 8A VSSL Conditions Unit typ. VIN=30V, Io=0.1A 30 Conditions Is mIN. VIN=10 to 43V, Io=3A ∆VOLOAD Conditions max. 30 Conditions SI-8050Y typ. 10 30 VIN=30V, EN/SS=0V 0.5 0.5 µA µA V VIN=30V VIN=30V 300 300 V/V Error Amplifier Transformer Conductance GEA 800 800 µA/V Current Sense Amplifier Impedance 1/GCS 0.16 0.16 V/A Maximum ON Duty DMAX 92 92 % Minimum ON Time DMIN 200 200 nsec *:R1=8kΩ, R2=2kΩ when Ta=25°C and Vo=5V 48 ICs SI-8000Y SI-8000Y 5 SS 5 SS C6 C6 Soft start Soft start +VOUT. ON/OFF SI-8000Y Series ■External Dimensions (TO220F-7) (Unit : mm) 10.0±0.2 4.2±0.2 2.8±0.2 φ 3.2±0.2 7.9±0.2 Pin Assignment q BS w SW e VIN r GND t COMP y FB u EN/SS 7.6±0.1 (Measured at the root) (3-R1) 6-0.74±0.15 10±0.5 2.8 17.6±0.7 16.9±0.3 4.0±0.2 0.5 Gate burr +0.2 6-0.65 –0.1 (5.3) R-end Plastic Mold Package Type Flammability: UL94V-0 Product Mass: Approx. 2.3g +0.2 0.45 –0.1 6×P1.27±0.15–7.62±0.15 4.3±0.5 3.6±0.5 (Measured at the root) 0.5 1 234 567 0.5 Plan View ■Block Diagram SI-8010Y SI-8050Y 3 3 IN Pre REG Current Sence Amp OSC Pre REG + – 2 UVLD TSD OCP EN/SS + – 7 EN/ SS SW – – + 6 1.0V BS DRIVE PWM LOGIC 2 UVLD TSD OCP EN/SS 5 COMP 1 Boot 5vREG BS DRIVE PWM LOGIC EN/ SS Current Sence Amp OSC 1 Boot 5vREG 7 IN SW 5 COMP 6 – – + FB Amp 1.0V FB Amp GND GND 4 4 ■Typical Connection Diagram Csn1 Rsn1 Csn1 Rsn1 Vin Vin 3 C1 + C2 IN 7 EN/SS C6 C5 1 BS SW 3 L1 2 SI-8010Y C1 + C2 D1 R1 6 COMP GND 5 4 C4 Vo FB IN 7 EN/SS C3 + C6 R2 Csn2 BS SW L1 2 SI-8050Y COMP GND 5 4 Vo D1 6 C4 C7 C5 1 C3 + FB Csn2 C7 R3 Rsn2 GND R3 GND SI-8010Y C1:2200µF/50V C2:4.7µF/50V C3:470µF/25V C4:1200pF C5:0.22µF/50V C7:680pF L1:47µH D1:FMW-2156 (Sanken) R1:8kΩ (When Vo=5V) R2:2kΩ R3:39kΩ Csn1,2=2200pF (When Vin>40V) Rsn1,2=10Ω (When Vin>40V) GND Rsn2 GND SI-8050Y C1:2200µF/50V Csn1,2=2200pF (When Vin>40V) C2:4.7µF/50V Rsn1,2=10Ω (When Vin>40V) C3:470µF/25V C4:1200pF C5:0.22µF/50V C7:680pF L1:56µH D1:FMW-2156 (Sanken) R3:39kΩ ICs 49