CSD19506KCS www.ti.com SLPS481 – DECEMBER 2013 80V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD19506KCS FEATURES 1 • • • • • • • 2 Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb-Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C TYPICAL VALUE Drain-to-Source Voltage 80 V Qg Gate Charge Total (10 V) 120 nC Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage APPLICATIONS • • UNIT VDS 20 nC VGS = 6 V 2.2 mΩ VGS = 10 V 2.0 mΩ 2.5 V ORDERING INFORMATION Secondary Side Synchronous Rectifier Motor Control Device Package Media Qty Ship CSD19506KCS TO-220 Plastic Package Tube 50 Tube DESCRIPTION This 80 V, 2.0 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. ABSOLUTE MAXIMUM RATINGS TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 80 V VGS Gate-to-Source Voltage ±20 V Continuous Drain Current (Package limited) 100 Continuous Drain Current (Silicon limited), TC = 25°C 273 Continuous Drain Current (Silicon limited), TC = 100°C 193 IDM Pulsed Drain Current (1) 236 A PD Power Dissipation 375 W TJ, TSTG Operating Junction and Storage Temperature Range –55 to 175 °C EAS Avalanche Energy, single pulse ID = 129 A, L = 0.1 mH, RG = 25 Ω 832 mJ Pin Out Drawing Drain (Pin 2) ID Gate (Pin 1) A (1) Pulse duration ≤ 300 μs, Duty cycle ≤ 1% Source (Pin 3) RDS(on) vs VGS GATE CHARGE 10 TC = 25°C, I D = 100A TC = 125°C, I D = 100A 9 VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (mΩ) 10 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 ID = 100A VDS = 40V 9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 Qg - Gate Charge (nC) 120 140 G001 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2013, Texas Instruments Incorporated CSD19506KCS SLPS481 – DECEMBER 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 64 V IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA RDS(on) Drain-to-Source On Resistance gfs Transconductance 80 2.1 V 1 μA 100 nA 2.5 3.2 V 2.2 2.8 mΩ VGS = 10 V, ID = 100 A 2.0 2.3 mΩ VDS = 8 V, ID = 100 A 297 VGS = 6 V, ID = 100 A S Dynamic Characteristics Ciss Input Capacitance 9380 12200 pF Coss Output Capacitance Crss Reverse Transfer Capacitance 2260 2940 pF 42 55 RG pF Series Gate Resistance 1.3 2.6 Ω Qg Gate Charge Total (10 V) 120 156 nC Qgd Gate Charge Gate to Drain Qgs Gate Charge Gate to Source Qg(th) Gate Charge at Vth Qoss Output Charge td(on) VGS = 0 V, VDS = 40 V, f = 1 MHz VDS = 40 V, ID = 100 A 20 nC 37 nC 25 nC 345 nC Turn On Delay Time 19 ns tr Rise Time 11 ns td(off) Turn Off Delay Time 30 ns tf Fall Time 10 ns VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 10 V, IDS = 100 A, RG = 0 Ω Diode Characteristics VSD Diode Forward Voltage ISD = 100 A, VGS = 0 V 0.9 Qrr Reverse Recovery Charge 525 nC trr Reverse Recovery Time VDS= 40 V, IF = 100 A, di/dt = 300 A/μs 1.1 V 107 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) MAX UNIT RθJC Thermal Resistance Junction to Case PARAMETER 0.4 °C/W RθJA Thermal Resistance Junction to Ambient 62 °C/W 2 Submit Documentation Feedback MIN TYP Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD19506KCS CSD19506KCS www.ti.com SLPS481 – DECEMBER 2013 TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) Figure 1. Transient Thermal Impedance TEXT ADDED FOR SPACING 200 180 180 IDS - Drain-to-Source Current (A) IDS - Drain-to-Source Current (A) TEXT ADDED FOR SPACING 200 160 140 120 100 80 60 VGS =10V VGS =8V VGS =6V 40 20 0 0 0.1 0.2 0.3 0.4 VDS - Drain-to-Source Voltage (V) 0.5 VDS = 5V 160 140 120 100 80 60 TC = 125°C TC = 25°C TC = −55°C 40 20 0 0 G001 Figure 2. Saturation Characteristics 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) 7 Product Folder Links: CSD19506KCS G001 Figure 3. Transfer Characteristics Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated 8 3 CSD19506KCS SLPS481 – DECEMBER 2013 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 100000 ID = 100A VDS = 40V 9 8 10000 C − Capacitance (pF) VGS - Gate-to-Source Voltage (V) 10 7 6 5 4 3 1000 100 2 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 10 1 0 0 20 40 60 80 100 Qg - Gate Charge (nC) 120 1 140 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) G001 Figure 4. Gate Charge TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 2.7 2.5 2.3 2.1 1.9 1.7 1.5 RDS(on) - On-State Resistance (mΩ) VGS(th) - Threshold Voltage (V) 2.9 1.1 −75 −50 −25 TC = 25°C, I D = 100A TC = 125°C, I D = 100A 9 8 7 6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200 TC - Case Temperature (ºC) G001 Figure 6. Threshold Voltage vs. Temperature 0 2 4 6 8 10 12 14 16 VGS - Gate-to- Source Voltage (V) 18 20 G001 Figure 7. On-State Resistance vs. Gate-to-Source Voltage TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 2.4 100 VGS = 6V VGS = 10V ISD − Source-to-Drain Current (A) Normalized On-State Resistance G001 10 ID = 250uA 1.3 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 −75 −50 −25 TC = 25°C TC = 125°C 10 1 0.1 0.01 0.001 ID =60A 0 25 50 75 100 125 150 175 200 TC - Case Temperature (ºC) G001 Figure 8. Normalized On-State Resistance vs. Temperature 4 80 Figure 5. Capacitance 3.1 2.2 70 0.0001 0 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage (V) 1 G001 Figure 9. Typical Diode Forward Voltage Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD19506KCS CSD19506KCS www.ti.com SLPS481 – DECEMBER 2013 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 1000 1000 10us 100us 1ms 10ms DC IAV - Peak Avalanche Current (A) IDS - Drain-to-Source Current (A) 5000 100 10 1 Single Pulse Max RthetaJC = 0.4ºC/W 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 1000 TC = 25ºC TC = 125ºC 100 10 0.01 G001 Figure 10. Maximum Safe Operating Area 0.1 TAV - Time in Avalanche (mS) 1 G001 Figure 11. Single Pulse Unclamped Inductive Switching TEXT ADDED FOR SPACING IDS - Drain- to- Source Current (A) 120 100 80 60 40 20 0 −50 −25 0 25 50 75 100 125 150 175 200 TC - Case Temperature (ºC) G001 Figure 12. Maximum Drain Current vs. Temperature Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD19506KCS 5 CSD19506KCS SLPS481 – DECEMBER 2013 www.ti.com MECHANICAL DATA KCS Package Dimensions Table 1. Pin Configuration Position 6 Designation Pin 1 Gate Pin 2 / Tab Drain Pin 3 Source Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: CSD19506KCS PACKAGE OPTION ADDENDUM www.ti.com 5-Feb-2014 PACKAGING INFORMATION Orderable Device Status (1) CSD19506KCS ACTIVE Package Type Package Pins Package Drawing Qty TO-220 KCS 3 50 Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Pb-Free (RoHS) CU SN N / A for Pkg Type Op Temp (°C) Device Marking (4/5) -55 to 175 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. 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