SavantIC Semiconductor Product Specification 2N6836 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Switching regulators ·Inverters ·Motor controls ·Deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 850 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 15 A ICM Collector current-peak 20 A IB Base current 10 A IBM Base current-peak 15 A PC Collector power dissipation 175 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification 2N6836 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=0.7A 1.2 V VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=1.0A TC=100 2.5 3.0 V Base-emitter saturation voltage IC=10A; IB=1.0A TC=100 1.5 1.5 V ICEV Collector cut-off current VCE=850V; VBE=-1.5V TC=100 0.25 1.5 mA IEBO Emitter cut-off current VEB=6V; IC=0 1.0 mA hFE-1 DC current gain IC=10A ; VCE=5V 8 hFE-2 DC current gain IC=15A ; VCE=5V 5 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 50 400 pF fT Transition frequency IC=0.25A ; VCE=10V;f=10MHz 10 75 MHz VBEsat CONDITIONS 2 MIN TYP. MAX 450 UNIT V 30 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2N6836