SavantIC Semiconductor Product Specification 2SB1550 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON APPLICATIONS ·For medium speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector; connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V -10 A 40 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB1550 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA, IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-0.1mA, IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-2mA, IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-5A ,IB=-20mA -2.0 V VBEsat Base-emitter saturation voltage IC=-5A ,IB=-20mA -2.5 V ICBO Collector cut-off current VCB=-80V, IE=0 -10 µA IEBO Emitter cut-off current VEB=-5V, IC=0 -2 mA hFE DC current gain IC=-5A ; VCE=-3V 2 MIN 1000 TYP. MAX 20000 UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB1550