SavantIC Semiconductor Product Specification 2SB703 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SD743 ·High power dissipation APPLICATIONS ·Designed for use in audio frequency power amplifier,low speed switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -4 A ICM Collector current-peak -6 A IB Base current -1 A PD Total power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX UNIT 3.125 /W SavantIC Semiconductor Product Specification 2SB703 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-1.0mA; IE=0 -80 V V(BR)EBO Emitter-base breakdown votage IE=-1.0mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-3A;IB=-0.3A -2.0 V VBEsat Base-emitter saturation voltage IC=-3A;IB=-0.3A -2.0 V ICBO Collector cut-off current VCB=-80V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-3V; IC=0 -10 µA hFE-1 DC current gain IC=-20mA ; VCE=-5V 30 hFE-2 DC current gain IC=-500mA ; VCE=-5V 40 Transition frequency IC=-100mA ; VCE=-5V,f=1MHz 10 fT CONDITIONS hFE-2 Classifications S R Q 40-80 60-120 100-200 2 MIN TYP. MAX UNIT 200 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SB703