SavantIC Semiconductor Product Specification 2SB731 Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SD809 ·Low collector saturation voltage · APPLICATIONS ·Audio frequency power amplifier ·Low speed switching PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -1 A ICM Collector current-Peak -2 A IB Base current (DC) -0.5 A PT Total power dissipation Ta=25 1.0 TC=25 10 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB731 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-1.0A; IB=-50mA -0.5 -0.6 V VBEsat Base-emitter saturation voltage IC=-1.0A; IB=-50mA -1.0 -1.2 V ICBO Collector cut-off current VCB=-50V; IE=0 -0.1 µA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 µA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 135 hFE-2 DC current gain IC=-1A ; VCE=-1V 40 Transition frequency IC=-10mA ; VCE=-2V 75 MHz Collector output capacitance IE=0; f=1MHz ; VCB=-10V 25 pF fT COB hFE-1 Classifications L K F E 135-270 200-400 300-480 360-600 2 600 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB731