SavantIC Semiconductor Product Specification 2SC1173 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SA473 ·Collector current :IC=3A ·Collector dissipation:PC=10W@TC=25? APPLICATIONS ·Low frequency power amplifier ·Power regulator PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25? ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 30 V VCEO Collector-emitter voltage Open base 30 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 3 A PC Collector power dissipation 10 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? TC=25? SavantIC Semiconductor Product Specification 2SC1173 Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 30 V V(BR)CBO Collector-base breakdown voltage IC=0.5mA ;IE=0 30 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V Collector-emitter saturation voltage IC=2A IB=0.2A 0.8 V VBE Base-emitter on voltage IC=0.5A ; VCE=2V 1.0 V ICBO Collector cut-off current VCB=20V;IE=0 1.0 µA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 µA hFE-1 DC current gain IC=0.5A ; VCE=2V 70 hFE-2 DC current gain IC=2.5A ; VCE=2V 25 COB Output capacitance IE=0; VCB=10V;f=1MHz 35 pF fT Transition frequency IC=0.5A ; VCE=2V 100 MHz VCEsat u CONDITIONS hFE-1 classifications O Y 70-140 120-240 2 MIN TYP. MAX UNIT 240 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC1173