SAVANTIC 2SC1431

SavantIC Semiconductor
Product Specification
2SC1431
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
APPLICATIONS
·For use in high frequency power
amplifier applications.
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
110
V
VCEO
Collector-emitter voltage
Open base
110
V
VEBO
Emitter-base voltage
Open collector
5
V
2
A
23
W
IC
Collector current
PD
Total power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC1431
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=50mA ;IB=0
110
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=1A; IB=0.1A
1.0
V
VBE sat
Base-emitter saturation voltage
IC=1A; IB=0.1A
1.2
V
ICBO
Collector cut-off current
VCB=110V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE
DC current gain
IC=0.4A ; VCE=2V
50
Transition frequency
IC=0.4A ; VCE=10V
30
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
240
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SC1431