SavantIC Semiconductor Product Specification 2SC1469 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For high voltage ,fast switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A IB Base current 4 A PT Total power dissipation 100 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC-25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.25 UNIT /W SavantIC Semiconductor Product Specification 2SC1469 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A 2.0 V ICBO Collector cut-off current VCB=500V; IE=0 0.1 mA ICEO Collector cut-off current VCE=400V; IB=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 15 hFE-2 DC current gain IC=5A ; VCE=5V 8 Transition frequency IC=1A ; VCE=5V fT CONDITIONS 2 MIN TYP. MAX 400 UNIT V 50 10 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC1469