SAVANTIC 2SC1785

SavantIC Semiconductor
Product Specification
2SC1785
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Power switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
200
V
VCEO
Collector-emitter voltage
Open base
200
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
15
A
IB
Base current
4
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC1785
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
200
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=10A; IB=1A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=10A; IB=1A
2.5
V
ICBO
Collector cut-off current
VCB=200V; IE=0
100
µA
IEBO
Emitter cut-off current
VEB=6V; IC=0
100
µA
hFE
DC current gain
IC=5A ; VCE=4V
2
MIN
20
TYP.
MAX
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SC1785