SavantIC Semiconductor Product Specification 2SC2334 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SA1010 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·DC/DC converters ·High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7 A ICM Collector current-peak 15 A IB Base current 3.5 A PT Total power dissipation Ta=25 1.5 TC=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC2334 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=5.0A ,IB=0.5A,L=1mH VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 0.6 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 µA ICEX Collector cut-off current VCE=100V; VBE(off)=-1.5V Ta=125 10 1.0 µA mA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=0.5A ; VCE=5V 40 hFE-2 DC current gain IC=3A ; VCE=5V 40 hFE-3 DC current gain IC=5A ; VCE=5V 20 100 UNIT V 200 Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=5.0A IB1=-IB2=0.5A RL=10B;VCCC50V hFE-2 Classifications M L K 40-80 60-120 100-200 2 0.5 µs 1.5 µs 0.5 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SC2334 SavantIC Semiconductor Product Specification 2SC2334 Silicon NPN Power Transistors 4