SavantIC Semiconductor Product Specification 2SC2830 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V 20 A 200 W IC Collector current PT Total power dissipation Tj Junction temperature 200 Tstg Storage temperature -65~200 Tmb=25 THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification 2SC2830 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 VCEsat Collector-emitter saturation voltage IC=12A; IB=2.4A 1.2 V VBEsat Base-emitter saturation voltage IC=12A; IB=2.4A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 0.1 mA ICEO Collector cut-off current VCE=400V; IB=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=2.4A ; VCE=5V 15 hFE-2 DC current gain IC=12A ; VCE=5V 10 2 MIN TYP. MAX 400 UNIT V 50 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC2830