SavantIC Semiconductor Product Specification 2SC3969 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·High breakdown voltage ·Fast switching speed APPLICATIONS ·For high voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 400 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current -DC 2 A ICM Collector current-Peak 4 A PC Collector power dissipation Ta=25 2 TC=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC3969 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=1.0A ;IB1=0.1A,L=1mH 400 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=50µA ;IE=0 400 V V(BR)EBO Emitter-base breakdown voltage IE=50µA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.2A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 10 µA IEBO Emitter cut-off current VEB=7V; IC=0 10 µA hFE DC current gain IC=0.1A ; VCE=5V Transition frequency IE=-0.1A ; VCE=10V;f=5MHz 10 MHz Collector outoput capacitance IE=0; f=1MHz ; VCB=10V 30 pF fT COB 25 50 Switching times ton Turn-on time ts Storage time tf Fall time VCC@200V ,IC=0.8A IB1=-IB2=0.08A;RL=250B 2 1.0 µs 2.5 µs 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 2SC3969