SavantIC Semiconductor Product Specification 2SC4927 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFM package ·Built-in damper diode ·High breakdown voltage APPLICATIONS ·TV/Character display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 1500 V 6 V Collector current 8 A IC(peak) Collector current-peak 9 A IC(surge) Collector current-surge 18 A Io C to E diode forward current 8 A PC Collector power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector IC TC=25 SavantIC Semiconductor Product Specification 2SC4927 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=500mA ;IC=0 ICES Collector cut-off current VCE=1500V; RBE=0 0.5 hFE DC current gain IC=1A ; VCE=5V 25 VCE(sat) Collector-emitter saturation voltage IC=6A ; IB=1.2A 5 V VBE(sat) Base-emitter saturation voltage IC=6A ; IB=1.2A 1.5 V Diode forward voltage IF=8A 2.0 V Fall time ICP=6A; fH=31.5kHz IB1=1.2A;IB2=-2.4A 0.5 µs VECF tf 2 6 UNIT V mA SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SC4927 SavantIC Semiconductor Product Specification 2SC4927 Silicon NPN Power Transistors 4