SavantIC Semiconductor Product Specification 2SD234 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SB434 APPLICATIONS ·For low frequency power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V 3 A IC Collector current PC Collector power dissipation 1.5 W TC=25 25 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD234 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=5mA ,IB=0 50 V V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ,IC=0 6 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 1.2 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=40V; IE=0 10 µA IEBO Emitter cut-off current VEB=4V; IC=0 10 µA hFE DC current gain IC=0.5A ; VCE=1V COB Output capacitance IE=0 ; VCB=10V,f=1MHz 90 pF fT Transition frequency IC=0.5A ; VCE=10V 3 MHz hFE Classifications R O Y 40-80 70-140 120-240 2 MIN TYP. 40 MAX UNIT 240 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SD234