SavantIC Semiconductor Product Specification MJ802 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type MJ4502 ·Excellent safe operating area APPLICATIONS ·For use as an output device in complementary audio amplifiers to 100-Watts music power per channel PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 90 V VEBO Emitter-base voltage Open collector 4 V IC Collector current 30 A IB Base current 7.5 A PC Collector power dissipation 200 W Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX UNIT 0.875 /W SavantIC Semiconductor Product Specification MJ802 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCE(sat) Collector-emitter saturation voltage IC=7.5A; IB=0.75A 0.8 V VBE(sat) Base-emitter saturation voltage IC=7.5A; IB=0.75A 1.3 V VBE Base-emitter on voltage IC=7.5A ; VCE=2V 1.3 V ICBO Collector cut-off current VCB=100V; IE=0 TC=150 1.0 5.0 mA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 mA hFE DC current gain IC=7.5A ; VCE=2V 25 Transition frequency IC=1A ; VCE=10V;f=1.0MHz 2.0 fT CONDITIONS 2 MIN TYP. MAX 90 UNIT V 100 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 MJ802