SavantIC Semiconductor Product Specification MJE1320 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High voltage ·Low collector saturation voltage APPLICATIONS ·For high-voltage ,power switching in inductive circuits and line operated switchmode applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1800 V VCEO Collector-emitter voltage Open base 900 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 2 A ICM Collector current-Peak 5 A IB Base current 1.5 A IBM Base current-Peak 2.5 A PD Total power dissipation 80 32 W Tj Junction temperature -65~150 Tstg Storage temperature -65~150 TC=25 TC=100 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 1.56 /W SavantIC Semiconductor Product Specification MJE1320 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=50mA; IB=0. VCE(sat)-1 Collector-emitter saturation voltage IC=1A ;IB=0.5A TC=100 0.18 0.3 1.0 1.5 V VCE(sat)-2 Collector-emitter saturation voltage IC=2A ;IB=1A 0.3 2.5 V VBE(sat)-1 Base-emitter saturation voltage IC=1A ;IB=0.5A TC=100 0.2 0.15 1.5 1.5 V VBE(sat)-2 Base-emitter saturation voltage IC=2A ;IB=1A 0.9 2.8 V ICEV Collector cut-off current VCEV=RatedValue;VBE(off)=1.5V TC=100 0.25 2.5 mA IEBO Emitter cut-off current VEB=9V; IC=0 0.25 mA hFE-1 DC current gain IC=2A ; VCE=5V 2.5 hFE-2 DC current gain IC=1A ; VCE=5V 3 COB Collector outoput capacitance IE=0 ; VCB=10V;f=1.0MHz 900 UNIT V 80 pF 0.1 µs 0.8 µs 4.0 µs 0.8 µs Switching times resistive load,Duty Cycle@2%,tp=25µs td Delay time tr Rise time ts Storage time tf Fall time VCC=250V; IC=1A IB1=IB2=0.5A 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 MJE1320