2N5401 -0.6 A, -160 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Switching and amplification in high voltage Applications such as telephony Low current (max. 600mA) High voltage (max. 160V) G H J A D REF. B A B C D E F G H J K K E C F Collector 3 Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 2 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO -160 V Collector to Emitter Voltage VCEO -150 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -0.6 A Collector Power Dissipation PC 0.625 W TJ, TSTG 150, -55~150 °C Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) SYMBOL MIN TYP MAX UNIT Collector to Base Breakdown Voltage PARAMETER V(BR)CBO -160 - - V IC=-100µA, IE = 0A Collector to Emitter Breakdown Voltage V(BR)CEO -150 - - V IC=-1mA, IB = 0A Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE=-10µA, IC = 0A Collector Cut-Off Current ICBO - - -50 nA VCB=-120 V, IE = 0 A Emitter Cut-Off Current IEBO - - -50 nA VEB=-3 V, IC = 0 A hFE(1) 80 - - hFE(2) 60 - 240 VCE=-5V, IC=-10mA hFE(3) 50 - - VCE=-5V, IC=-50mA Collector to Emitter Saturation Voltage VCE(sat) - - -0.5 V IC=-50mA, IB=-5mA Base to Emitter Saturation Voltage VBE(sat) - - -1 V IC=-50mA, IB=-5mA fT 100 - 300 MHz DC Current Gain Transition Frequency http://www.SeCoSGmbH.com/ 4-Feb-2010 Rev. B TEST CONDITION VCE=-5V, IC=-1mA VCE = -5V, IC = -10mA, f=30MHz Any changes of specification will not be informed individually. Page 1 of 2 2N5401 Elektronische Bauelemente -0.6 A, -160 V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 4-Feb-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 2