2N7002T 0.115A , 60V , RDS(ON) 7.2Ω N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. A M 3 3 C B Top View 1 1 K MARKING 2 L 2 E D K72 F G PACKAGE INFORMATION REF. Package MPQ Leader Size SOT-523 3K 7 inch A B C D E F Millimeter Min. Max. 1.5 1.7 1.45 1.75 0.75 0.85 0.7 0.9 0.9 1.1 0.15 0.25 H REF. G H J K L M J Millimeter Min. Max. 0.1 0.55 REF. 0.1 0.2 0.5 TYP. 0.25 0.325 Drain Gate Source ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit VDS 60 V Drain Current ID 115 mA Power Dissipation PD 150 mW RθJA 833 °C / W Operating Junction Temperature Range TJ 150 °C Operating Storage Temperature Range TSTG -55~150 °C Drain-Source Voltage Maximum Junction to Ambient http://www.SeCoSGmbH.com/ 13-Dec-2011 Rev. C Any changes of specification will not be informed individually. Page 1 of 3 2N7002T 0.115A , 60V , RDS(ON) 7.2Ω N-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage V(BR)DSS 60 - - V VGS =0, ID =250μA VGS(th) 1 - - V VDS=VGS, ID=250μA Gate-Body Leakage IGSS - - ±80 nA VDS=0, VGS= ±25V Zero Gate Voltage Drain Current IDSS - - 80 nA VDS =60V, VGS=0 On-State Drain Current ID(ON) 500 - - mA VGS =10V, VDS =7V 1 - 7.2 1 - 7.2 80 - 500 0.5 - 3.75 0.05 - 0.375 Gate Threshold Voltage Drain-Source On Resistance RDS(ON) Forward transfer admittance gfs Drain-Source On Voltage VDS(ON) Diode Forward Voltage VSD 0.55 - 1.2 Input Capacitance Ciss - - 50 Output Capacitance Coss - - 25 Reverse Transfer Capacitance Crss - - 5 Ω mS V VGS=10V, ID=500mA VGS=5V, ID =50mA VDS=10V, ID =200mA VGS=10V, ID =500mA VGS=5V, ID =50mA V IS=115mA, VGS=0 pF VDS=25V, VGS=0, f=1MHz nS VGEN=10V, VDD= 25V, ID=500mA, RG=25Ω, RL=50Ω Switching Time Turn-On Time Turn-Off Time http://www.SeCoSGmbH.com/ 13-Dec-2011 Rev. C Td(ON) Td(OFF) - - 20 40 Any changes of specification will not be informed individually. Page 2 of 3 2N7002T Elektronische Bauelemente 0.115A , 60V , RDS(ON) 7.2Ω N-Channel Enhancement MOSFET TYPICAL CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 13-Dec-2011 Rev. C Any changes of specification will not be informed individually. Page 3 of 3