2SA1298 -0.8A , -35V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES Low Frequency Power Amplifier Application Power Switching Applications A L 3 3 C B Top View CLASSIFICATION OF hFE (1) 1 Product-Rank 2SA1298-O 2SA1298-Y Range 100~200 160~320 Marking IO IY 1 2 K E 2 D F REF. PACKAGE INFORMATION Package MPQ LeaderSize SOT-23 3K 7’ inch H G A B C D E F Millimeter Min. Max. 2.80 3.00 2.25 2.55 1.20 1.40 0.90 1.15 1.80 2.00 0.30 0.50 REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP. Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol Ratings Unit VCBO VCEO VEBO IC PC RθJA TJ, TSTG -35 -30 -5 -800 200 625 150, -55~150 V V V mA mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage Collector to Emitter Breakdown V lt Emitter to Base Breakdown Voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO -35 -30 -5 - - -0.1 -0.1 V V V A A hFE(1) 100 - 320 VCE= -1V, IC= -100mA hFE(2) 40 - - VCE= -1V, IC= -800mA VCE(sat) -0.5 - -0.8 Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector to Emitter Saturation Voltage V IC= -500mA, IB= -20mA VCB= -1V, IC= -10mA Base to Emitter Saturation Voltage VBE - - -0.5 V Transition Frequency Collector Output Capacitance fT Cob - 120 13 - MHz pF http://www.SeCoSGmbH.com/ 19-Jan-2011 Rev. A Test Conditions IC= -1mA, IE=0 IC= -10mA, IB=0 IE= -1mA, IC=0 VCB= -30V, IE=0 VEB= -5V, IC=0 VCE= -5V, IC= -10mA VCB= -10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 1