SECOS 2SA1797_09

2SA1797
PNP
General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
FEATURES
4
High transition frequency
High power dissipation
1
2
3
A
PACKAGE DIMENSIONS
E
B
C
D
1
F
G
2
H
K
3
J
1. Base
2. Collector
3. Emitter
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
0.89
1.20
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
REF.
G
H
J
K
L
MARKING : AGX
X = hFE Rank Code
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction & Storage temperature
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-50
-50
-6
-2
0.5
150, -55~150
V
V
V
A
W
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
PNP ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Typical Transition frequency
Output Capacitance
Symbol
Min.
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
COB
-50
-50
-6
82
-
Typ.
200
36
Max.
Unit
-0.1
-0.1
270
-0.35
-
V
V
V
µA
µA
V
MHz
pF
Test Conditions
IC=-50µA, IE=0
IC= -1mA, IB=0
IE=-50µA, IC=0
VCB=-50V, IE=0
VEB=-5 V, IC=0
VCE=-2V, IC= -500mA
IC=-1A, IB= -50mA
VCE=-2V, IC=-500mA, f = 100MHz
VCB=-10V, IE=0, f=1MHz
CLASSIFICATION OF hFE2
Rank
P
Q
Range
82 - 180
120 - 270
http://www.SeCoSGmbH.com/
29-Oct-2009 Rev. C
Any changes of specification will not be informed individually.
Page 1 of 2
2SA1797
Elektronische Bauelemente
PNP
General Purpose Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
29-Oct-2009 Rev. C
Any changes of specification will not be informed individually.
Page 2 of 2