SECOS 2SA608N

2SA608N
-0.1 A, -40 V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURES

Large current capacity and wide ASO.
G
H
APPLICATIONS

Capable of being used in the low frequency to
high frequency range.
Emitter
Collector
Base
J
A
D
160~320
A
B
C
D
E
F
G
H
J
K
K
Product-Rank 2SA608N-F 2SA608N-G
Range
REF.
B
CLASSIFICATION OF hFE
280~560
E
C
F
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
2.42
2.66
0.36
0.76
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction, Storage Temperature
Symbol
Rating
Unit
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
-60
-50
-6
-0.15
500
250
150, -55~150
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
-60
-50
-6
160
70
-
200
4.5
-0.1
-0.1
560
-0.3
-1
-
V
V
V
μA
μA
Collector to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
26-Jan-2011 Rev. A
V
V
MHz
pF
Test condition
IC= -0.01mA, IE=0
IC= -1mA, IB=0
IE= -0.01mA, IC=0
VCB= -40V, IE=0
VEB= -5V, IC=0
VCE= -6V, IC= -1mA
VCE= -6V, IC= -0.1mA
IC= -100mA, IB= -10mA
IC= -100mA, IB= -10mA
VCE= -6V, IC= -10mA
VCB= -6V, IC= 0, f=1MHz
Any changes of specification will not be informed individually.
Page 1 of 1