2SA844 -0.1A , -55V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High DC Current Gain Low Frequency Amplifier G H Emitter Collector Base J CLASSIFICATION OF hFE A Product-Rank 2SA844-C 2SA844-D 2SA844-E Range 160~320 250~500 400~800 D REF. B K E C F A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction, Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC RθJA TJ, TSTG -55 -55 -5 -100 300 416 150, -55~150 V V V mA mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Voltage Transition Frequency Collector Output Capacitance V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob -55 -55 -5 160 - 200 2 -0.1 -0.05 800 -0.5 -0.75 - V V V μA μA http://www.SeCoSGmbH.com/ 14-Feb-2011 Rev. A V V MHz pF Test condition IC= -0.01mA, IE=0 IC= -1mA, IB=0 IE= -0.01mA, IC=0 VCB= -18V, IE=0 VEB= -2V, IC=0 VCE= -12V, IC= -2mA IC= -10mA, IB= -1mA VCE= -12V, IC= -2mA VCE= -12V, IC= -2mA VCE= -10V, IC=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 1