2SB1197 -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 Low VCE(sat).VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A Complements of the 2SD1781 A L 3 3 C B Top View 1 CLASSIFICATION OF hFE 1 Product-Rank 2SB1197-P 2SB1197-Q 2SB1197-R Range 82~180 120~270 180~390 Marking AHP AHQ AHR K 2 E D F MPQ LeaderSize SOT-23 3K 7’ inch H G Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. PACKAGE INFORMATION Package 2 A B C D E F REF. G H J K L J Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -32 V Emitter to Base Voltage VEBO -5 V IC -800 mA Pc 200 mW TJ, TSTG +150, -55 ~ +150 ℃ Collector Currrent Total Power Dissipation Junction & Storage Temperature Unit ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO -40 - - V IC=-50μA, IE = 0 Collector-emitter breakdown voltage BVCEO -32 - - V IC=-1mA, IB = 0 Emitter-base breakdown voltage BVEBO -5 - - V IE=-50μA, IC = 0 ICBO - - -0.5 μA VCB=-20V, IE = 0 Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage IEBO - - -0.5 μA VEB= -4V, IC = 0 VCE(sat) - - -0.5 V IC=-500mA, IB=-50mA DC current gain hFE 82 - 390 Transition frequency fT 50 200 - MHz COB - 12 30 pF Collector output capacitance http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. C Test Conditions VCE=-3V, IC=-100mA VCE=-5V, IC=-50mA, f=100MHz VCB=-10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 2 2SB1197 Elektronische Bauelemente -0.8 A, -40 V PNP Epitaxial Planar Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. C Any changes of specification will not be informed individually. Page 2 of 2