2SB1132 -1A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89 Low power dissipation 0.5W 4 MARKING 1 2 3 1132 A Date Code E C B CLASSIFICATION OF hFE Product Rank Range D F 2SB1132-P 2SB1132-Q 2SB1132-R 82~180 120~270 180~390 H PACKAGE INFORMATION MPQ LeaderSize SOT-89 1K 7’ inch K J REF. Package G A B C D E F L Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 1.2 0.89 0 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction & Storage Temperature Symbol Ratings Unit VCBO VCEO VEBO IC PC TJ, TSTG -40 -32 -5 -1 500 150, -55~150 V V V A mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance http://www.SeCoSGmbH.com/ 10-Dec-2010 Rev. B Symbol Min. Typ. Max. Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob -40 -32 -5 82 - -0.2 150 20 -0.5 -0.5 390 -0.5 30 V V V µA µA V MHz pF Test Conditions IC= -50µA, IE=0 IC= -1mA, IB=0 IE= -50µA, IC=0 VCB= -20V, IE=0 VEB= -4V, IC=0 VCE= -3V, IC= -100mA IC= -500mA, IB= -50mA VCE= -5V, IC= -50mA, f=30MHz VCB= -10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 3 2SB1132 Elektronische Bauelemente -1A, -40V PNP Silicon Medium Power Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 10-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 3 2SB1132 Elektronische Bauelemente -1A, -40V PNP Silicon Medium Power Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 10-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 3 of 3