2SB1426 -3A , -20V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification G H Emitter Base Collector J A CLASSIFICATION OF hFE D REF. Product-Rank 2SB1426-P 2SB1426-Q 2SB1426-R Range 82~180 120~270 180~390 B A B C D E F G H J K K E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -20 V Collector to Emitter Voltage VCEO -20 V Emitter to Base Voltage VEBO -6 V Collector Current - Continuous IC -3 A Collector Power Dissipation PC 0.75 W RθJA 166 °C / W TJ, TSTG 150, -55~150 °C Thermal Resistance From Junction to Ambient Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test condition Collector to Base Breakdown Voltage V(BR)CBO -20 - - V IC= -0.05mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -20 - - V IC= -1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -6 - - V IE= -0.05mA, IC=0 Collector Cut-Off Current ICBO - - -0.1 μA VCB= -20V, IE=0 Emitter Cut-Off Current IEBO - - -0.1 μA DC Current Gain hFE 82 - 390 Collector to Emitter Saturation Voltage Collector-Base Capacitance Transition Frequency *Pulse test http://www.SeCoSGmbH.com/ 14-Feb-2011 Rev. A VCE(sat) * VEB= -5V, IC=0 VCE= -2V, IC= -0.1A - - -0.5 V IC= -2A, IB= -0.1A Ccb - 35 - pF VCB= -10V, IE=0, f=1MHz fT - 240 - MHz VCE= -2V, IC= -0.5A, f=100MHz Any changes of specification will not be informed individually. Page 1 of 1