SECOS 2SC1906

2SC1906
0.05 A , 30 V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES

High Transition Frequency
TO-92
G
H
APPLICATIONS

VHF Amplifier

Mixer, Local Oscillator
Emitter
Collector
Base
J
A
D
REF.
B
A
B
C
D
E
F
G
H
J
K
K
E
C
F
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
2.42
2.66
0.36
0.76
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
19
V
Emitter to Base Voltage
VEBO
2
V
IC
50
mA
Collector Current - Continuous
Collector Power Dissipation
PC
300
mW
RθJA
416
°C / W
TJ, TSTG
150, -55~150
°C
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector to Base Breakdown Voltage
V(BR)CBO
30
-
-
V
IC=0.01mA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
19
-
-
V
IC=3mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
2
-
-
V
IE=0.01A, IC=0
Collector Cut – Off Current
ICBO
-
-
0.5
μA
VCB=10V, IE=0
Emitter Cut – Off Current
IEBO
-
-
0.5
μA
DC Current Gain
hFE
40
-
-
Collector to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
24-Feb-2011 Rev. A
Test Conditions
VEB=2V, IC=0
VCE=10V, IC=10mA
VCE(sat)
-
-
1
V
IC=20mA, IB=4mA
fT
600
-
-
MHz
VCE=10V, IC=10mA
Cob
-
-
2
pF
VCB=10V, IE=0, f=1MHz
Any changes of specification will not be informed individually.
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