2SC2120 0.8 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High DC Current Gain Complementary to 2SA950 G H J CLASSIFICATION OF hFE Product-Rank 2SC2120-O 1Emitter 2Collector 3Base A D 2SC2120-Y Range 100~200 Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 REF. B A B C D E F G H J K 160~320 K E C F Collector 2 3 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 35 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 0.8 A Collector Power Dissipation PC 0.6 W RθJA 208 °C / W TJ, TSTG 150, -55~150 °C Thermal Resistance From Junction to Ambient Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 35 - - V IC=0.1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=0.1mA, IC=0 Collector Cut – Off Current ICBO - - 0.1 µA VCB=35V, IE=0 Collector Cut – Off Current ICEO - - 0.1 µA VCE=25V, IB=0 Emitter Cut – Off Current IEBO - - 0.1 µA VEB=5V, IC=0 DC Current Gain hFE 100 - 320 VCE(sat) - - 0.5 V IC=500mA, IB=20mA Base to Emitter voltage VBE - - 0.8 V VCE=1V, IC=10mA Collector Output Capacitance Cob - - 13 pF fT 100 - - MHz Collector to Emitter Saturation Voltage Transition Frequency http://www.SeCoSGmbH.com/ 28-Jan-2011 Rev. B VCE=1V, IC=100mA VCB=10V, IE=0, f=1MHz VCE=5V, IC=10mA Any changes of specification will not be informed individually. Page 1 of 2 2SC2120 Elektronische Bauelemente 0.8 A , 35 V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 28-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 2