2SC2216 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Amplifier dissipation NPN Silicon G H Base Emitter Collector J A D A B C D E F G H J K K E Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 REF. B C F Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 45 V Emitter to Base Voltage VEBO 4 V Collector Current - Continuous IC 50 mA Collector Power Dissipation PC 300 mW TJ, TSTG 125, -55~125 °C Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 50 - - V IC=100μA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 45 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 4 - - V IE=100μA, IC=0 Collector Cut – Off Current ICBO - - 0.1 μA VCB=50V, IE=0 Emitter Cut – Off Current IEBO - - 0.1 μA DC Current Gain hFE 40 - 140 VEB=3V, IC=0 VCE=12.5V, IC=12.5mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.2 V IC=15mA, IB=1.5mA Base to Emitter voltage VBE(sat) - - 1.5 V IC=15mA, IB=1.5mA fT 300 - - MHz Cob - - 2 pF Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 17-Feb-2011 Rev. A VCE=12.5V, IC=12.5mA VCB=10V, IE=0, f=30MHz Any changes of specification will not be informed individually. Page 1 of 2 2SC2216 Elektronische Bauelemente 0.05 A , 50 V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 17-Feb-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2