2SC4548 0.2A , 400V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES 4 Small Flat Package High Breakdown Voltage Excellent hFE Linearity 1 2 B C 3 E A E CLASSIFICATION OF hFE C B Product-Rank 2SC4548-D 2SC4548-E Range 60~120 100~200 D F G H K J L CN Marking Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.25 2.60 1.50 1.85 0.89 1.20 REF. A B C D E F PACKAGE INFORMATION Package MPQ Leader Size SOT-89 1K 7 inch Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 REF. G H J K L Collector 2 1 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Symbol Ratings Unit Collector-Base Voltage Parameter VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5 V Collector Current-Continuous IC 200 mA Collector Power Dissipation PC 500 mW RθJA 250 °C / W TJ, TSTG 150, -55~150 °C Maximum Junction to Ambient Junction & Storage Temperature ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector-Base Breakdown Voltage V(BR)CBO 400 - - V IC=10µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 400 - - V IC=1mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 5 - - V IE=10µA, IC=0 Collector Cut-Off Current ICBO - 0.1 µA VCB=300V, IE=0 Emitter Cut-Off Current IEBO - - 0.1 µA VEB=4V, IC=0 DC Current Gain hFE 60 - 200 Collector-Emitter Saturation voltage VCE(sat) - - 0.6 V IC=50mA, IB= 5mA Base-Emitter Saturation Voltage VBE(sat) - - 1 V IC=50mA, IB= 5mA fT - 70 - MHz VCE=30V, IC=10mA COB - 4 - pF Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 04-Nov-2011 Rev. A Test conditions VCE=10V, IC= 50mA VCB=30V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 1