2SC5585 0.5A , 15V NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-523 High Current. Low VCE(sat). VCE(sat)≦0.25V (@IC=200mA / IB=10mA) Complement of 2SC4738. A M 3 3 Application C B Top View 1 General Purpose Amplification. 1 2 L K 2 E MARKING D F BX REF. PACKAGE INFORMATION Package MPQ LeaderSize SOT-523 3K 7’ inch H G A B C D E F Millimeter Min. Max. 1.5 1.7 1.45 1.75 0.75 0.85 0.7 0.9 0.9 1.1 0.15 0.25 J Millimeter Min. Max. 0.1 0.55 REF. 0.1 0.2 0.5 TYP. 0.25 0.325 REF. G H J K L M Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 6 V Parameter Collector Currrent IC 500 mA Collector Power Dissipation PC 150 mW TJ, TSTG 150, -55 ~ 150 ℃ Junction & Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage V(BR)CBO 15 - - V IC=10μA, IE=0 Collector-emitter breakdown voltage V(BR)CEO 12 - - V IC=1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 6 - - V IE=10μA, IC=0 Collector cut-off current ICBO - - 0.1 μA VCB=15V, IE=0 Emitter cut-off current IEBO - - 0.1 μA VEB=6V, IC=0 DC current gain hFE 270 - 680 VCE(sat) - - 0.25 V fT - 320 - MHz Cob - 7.5 - pF Collector-emitter saturation voltage * Transition frequency Collector output capacitance http://www.SeCoSGmbH.com/ 24-Feb-2011 Rev. B VCE=2V, IC=10mA IC=200mA, IB=10mA VCE=2V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 2 2SC5585 Elektronische Bauelemente 0.5A , 15V NPN Silicon General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 24-Feb-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 2